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BSC037N08NS5
  • BSC037N08NS5

BSC037N08NS5

Active and preferred

OptiMOS™ 5 80 V power MOSFET , especially designed for Synchronous Rectification for telecom and server power supplies . In addition, the device can also be utilized in other industrial applications such as solar , low voltage drives and adapter . Within seven different packages, the OptiMOS™ 5 80 V MOSFETs offer the industry’s lowest RDS(on). Additionally, compared to the previous generation, OptiMOS™ 5 80 V has an RDS(on) reduction of up to 43%.

Infineon Technologies BSC037N08NS5 Product Info

16 April 2026 0

Parameters

Battery voltage

36-48 V

Budgetary Price €/1k

0.76

Ciss

3200 pF

Coss

530 pF

ID (@25°C) max

131 A

IDpuls max

524 A

Mounting

SMD

Operating Temperature range

-55 °C to 175 °C

Package

SuperSO8 5x6

Pin Count

8 Pins

Polarity

N

Ptot max

114 W

QG (typ @10V)

46 nC

RDS (on) (@10V) max

3.7 mΩ

RthJA max

50 K/W

RthJC max

1.1 K/W

Rth

1.1 K/W

VDS max

80 V

VGS(th) range

2.2 V to 3.8 V

VGS(th)

3 V

Apps

Medium voltage IBC (48 V), Edge computing, Telecommunications infrastructure, Mobile device and smartphone solutions, Power conversion

Features

  • Optimized for synchronous rectification
  • Ideal for high switching frequency
  • Up to 44% reduced output capacitance
  • 43% RDS(on) reduction from previous gen

Description

  • Highest system efficiency
  • Reduced switching and conduction losses
  • Less paralleling required
  • Increased power density
  • Low voltage overshoot
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