IMBG120R030M1H

The CoolSiC™ 1200 V, 30 mΩ SiC MOSFET in a D2PAK-7L (TO-263-7) package build on a state-of-the-art trench semiconductor process optimized to combine performance with reliability in operation. The low power losses of CoolSiC technology, combined with .XT interconnection technology in a new 1200 V optimized SMD package, enables top efficiency and passive cooling potential in applications such as drives, chargers and industrial powers supplies.

Infineon Technologies IMBG120R030M1H Product Info

16 April 2026 0

Parameters

Ciss	2290 pF
Coss	105 pF
ID (@25°C) max	56 A
Mounting	SMD
Operating Temperature range	-55 °C to 175 °C
Package	TO-263-7
Pin Count	7 Pins
Polarity	N
Ptot (@ TA=25°C) max	300 W
Qgd	15 nC
QG	63 nC
Qualification	Industrial
RDS (on) (@ Tj = 25°C)	30 mΩ
RthJA max	62 K/W
RthJC max	0.5 K/W
Technology	CoolSiC™ G1
Tj max	175 °C
VDS max	1200 V

Apps

Medium voltage IBC (48 V), EV charging, DIN rail power supply solutions, Industrial motor drives and controls, Photovoltaic, 1-phase string inverter solutions, Power conversion, Uninterruptible power supplies (UPS)

Features

Very Low switching losses
Short-circuit withstand time, 3 µs
Fully controllable dV/dt
Benchmark gate threshold voltage
V_GS(th)= 4.5 V
Robust against parasitic turn-on
0V turn-off gate voltage applicable
Robust diode for hard commutation
.XT interconnection technology
Package creepage distances > 6.1 mm
And clearance distances, > 6.1 mm
Sense pin for optimized switching

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ELECTRONIC COMPONENTS
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IMBG120R030M1H

Infineon Technologies IMBG120R030M1H Product Info

Parameters

Apps

Features

SUBMITTED SUCCESSFULLY！

ELECTRONIC COMPONENTS All In One Distributor

IMBG120R030M1H

Infineon Technologies IMBG120R030M1H Product Info

Parameters

Apps

Features

SUBMITTED SUCCESSFULLY！

ELECTRONIC COMPONENTS
All In One Distributor