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5962F1123501VXC
  • 5962F1123501VXC

5962F1123501VXC

Active and preferred

Infineon’s FAST 4-Mbit asynchronous Static RAMs designed with Infineon’s patented RADSTOP™ technology is well suited for space as well as other harsh environment applications. The 4-Mbit FAST SRAM is a high-performance, low power SRAM organized as 512 Kwords by 8-bits.

Infineon Technologies 5962F1123501VXC Product Info

16 April 2026 0

Parameters

Density

4 MBit

Device weight

3878.7 mg

Family

FAST SRAM

Interfaces

Parallel

Lead Ball Finish

Ni/Au

Operating Temperature range

-55 °C to 125 °C

Operating Voltage (VCCQ) range

3 V to 3.6 V

Operating Voltage range

3 V to 3.6 V

Organization (X x Y)

512K x 8

Peak Reflow Temp

220 °C

Planned to be available until at least

2033

Qualification

Military

Speed

12 ns

Features

  • 512-Kbit x8 bus-width configuration
  • 12 ns (125°C) access times
  • 3.3 V operating voltage
  • 55°C to +125°C military temperature grade
  • Bit-interleaving to eliminate multi-bit errors
  • Low active power
  • Low CMOS standby power
  • 2.0 V data retention
  • Automatic power-down when deselected
  • 36-pin Ceramic Flat Pack (CFP)
  • MIL-PRF 38535 compliant
  • QML-V qualified

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