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FF450R33T3E3_B5
  • FF450R33T3E3_B5

FF450R33T3E3_B5

Active and preferred

XHP™ 3 3300 V, 450 A half-bridge IGBT module with TRENCHSTOP™ IGBT3, emitter controlled diode and with enhanced isolation of 10.4 kV.

Infineon Technologies FF450R33T3E3_B5 Product Info

16 April 2026 0

Parameters

Configuration

half-bridge

Dimensions (width)

99.8 mm

Dimensions (length)

140 mm

Features

Phase leg, 10.4 kV isolation

Housing

XHP™ 3

IC(nom) / IF(nom)

450 A

IC max

450 A

Qualification

Industrial, Traction

Technology

IGBT3 - E3

VCE(sat) (Tvj=25°C typ)

2.55 V

VCES / VRRM

3300 V

VF (Tvj=25°C typ)

3.1 V

Voltage Class max

3300 V

Apps

Power transmission and distribution, Traction, Motor control

Features

  • High DC stability
  • Low VCEsat
  • Extended storage temperature
  • * down to T(stg) = -55°C
  • Package with CTI > 600
  • Package insulation 10.4 kV AC 1min
  • Tvj op=150°C
  • AlSiC base plate
  • Increased TC capability
  • Fire & smoke EN45545 R22, R23 : HL3
  • Modular concept
  • Halfbridge configuration

Description

  • Standardized housing: 100x140x40 mm
  • decades of field experience
  • Long service life
  • Enables clean electrical design
  • Enables clean mechanical design
  • Easy set-up of 3level NPC1 topology
  • Easy set-up of parallelling
  • Scalability in smaller steps
  • One type for various power levels
  • Smoother supply chain handling
  • Enables downsizing on system level
  • less EMI issues

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