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IPB180N03S4L-01
  • IPB180N03S4L-01

IPB180N03S4L-01

Infineon Technologies IPB180N03S4L-01 Product Info

16 April 2026 0

Parameters

Budgetary Price €/1k

1.42

Country of Assembly (Last BE site, current, subject to change)

Malaysia

Country of Diffusion (Last FE site, current, subject to change)

Malaysia

ID (@25°C) max

180 A

IDpuls max

720 A

Operating Temperature range

-55 °C to 175 °C

Package

D2PAK (PG-TO263-7)

Polarity

N

Ptot max

188 W

QG (typ @10V) max

239 nC

QG (typ @10V)

187 nC

Qualification

Automotive

RDS (on) (@10V) max

1.05 mΩ

RthJC max

0.8 K/W

Technology

OptiMOS™T2

VDS max

30 V

VGS(th) range

1 V to 2.2 V

VGS(th)

1.5 V

Features

  • N-channel - Enhancement mode
  • AEC qualified
  • MSL1 up to 260°C peak reflow
  • 175°C operating temperature
  • Green Product (RoHS compliant)
  • 100% Avalanche tested
  • Ultra low RDS(on)
  • PPAP Capable Device

Description

  • Highest current capability
  • Lowest switching and conduction losses
  • Highest thermal efficiency
  • Robust packages & superior quality
  • Optimal total gate charge
  • Smaller driver output stages

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