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DDB2U60N07W1RF_B58
  • DDB2U60N07W1RF_B58

DDB2U60N07W1RF_B58

Active and preferred

650 V, 60 A EasyBRIDGE™ rectifier bridge modules with CoolSiC™ MOSFET and CoolSiC™ Schottky diode G5 650 V, NTC, in an Easy 1B housing with PressFIT contact technology.

Infineon Technologies DDB2U60N07W1RF_B58 Product Info

16 April 2026 0

Parameters

Configuration

SiC Rectifier Bridge

Dimensions (width)

33.8 mm

Dimensions (length)

62.8 mm

Housing

EasyBRIDGE 1

I(FSM) max

340 A

IRMSM

70 A

Voltage Class

650 V

Voltage Class max

650 V

Apps

EV charging, DC EV Charging

Features

  • Best in Class packages with 12mm height
  • Leading edge WBG material
  • Very low module stray inductance
  • PressFIT pins
  • Integrated NTC temperature sensor
  • SiC Schottky Diode Gen 5 technology

Description

  • Outstanding module efficiency
  • System cost advantages
  • System efficiency improvement
  • Reduced cooling requirements
  • Enabling higher frequency
  • Increase of power density
  • Compact design
  • Rised performance for fast DC charging

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