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S27KL0643GABHB023
  • S27KL0643GABHB023

S27KL0643GABHB023

Active and preferred

{"en":"S27KL0643GABHB023 is a 64 Mb HYPERRAM\u2122 PSRAM with Octal xSPI DDR. It supports 1.72.0 V or 2.73.6 V, up to 200 MHz, 35 ns tACC, and 12 b5A deep power-down. AEC-Q100 Grade 2, 24-ball FBGA.","zh":"S27KL0643GABHB023为64 Mb HYPERRAM\u2122 PSRAM，支持Octal xSPI DDR。供电1.72.0 V或2.73.6 V，最高200 MHz，tACC 35 ns，深度掉电12 b5A。AEC-Q100 Grade 2，24球FBGA。","ja":"S27KL0643GABHB023は64 MbのHYPERRAM\u2122 PSRAMでOctal xSPI DDR対応。

Infineon Technologies S27KL0643GABHB023 Product Info

16 April 2026 0

Parameters

Density

64 MBit

Family

KL-3

Initial Access Time

35 ns

Interface Bandwidth

400 MByte/s

Interface Frequency (SDR/DDR) (MHz)

- / 200

Interfaces

xSPI (Octal)

Lead Ball Finish

N/A

Operating Temperature range

-40 °C to 105 °C

Operating Voltage range

2.7 V to 3.6 V

Operating Voltage

3 V

Peak Reflow Temp

260 °C

Planned to be available until at least

See roadmap

Qualification

Automotive

Technology

HYPERRAM

Features

  • Octal xSPI with CS# and RWDS
  • 8-bit DQ data bus
  • 1.8 V and 3.0 V interface
  • 200 MHz maximum clock rate
  • DDR transfers on both edges
  • Up to 400 MBps data throughput
  • Burst modes: linear and wrapped
  • Wrap bursts: 16/32/64/128 B
  • Hybrid burst: wrap then linear
  • Configurable output drive strength
  • Hybrid Sleep retains memory data
  • Deep power down stops refresh

Description

  • Octal xSPI reduces routing effort
  • RWDS strobe simplifies DDR design
  • Dual-voltage I/O fits more MCUs
  • 200 MHz supports fast memory access
  • DDR boosts bandwidth per clock
  • 400 MBps enables high-speed buffers
  • Burst modes tune system efficiency
  • Wrapped bursts reduce bus overhead
  • Hybrid burst aids mixed access
  • Drive strength tuning improves SI
  • Hybrid Sleep saves power, keeps data
  • DPD cuts current in idle states

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