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CY14E256LA-SZ25XI
  • CY14E256LA-SZ25XI

CY14E256LA-SZ25XI

CY14E256LA-SZ25XI is a 256-Kbit (32 K × 8) parallel nvSRAM that combines fast SRAM with QuantumTrap nonvolatile storage. It operates from a single 4.5 V to 5.5 V supply with 25 ns access. Data is automatically STOREd on power-down using a 68 µF VCAP capacitor and RECALLed on power-up, with optional software or HSB pin control. It supports 1 million STORE cycles and 20-year retention over -40 to 85°C.

Infineon Technologies CY14E256LA-SZ25XI Product Info

16 April 2026 0

Parameters

Density

256 kBit

Interfaces

Parallel

Lead Ball Finish

Pure Sn

Operating Temperature range

-40 °C to 85 °C

Operating Voltage (VCCQ) max

5.5 V

Operating Voltage range

4.5 V to 5.5 V

Organization (X x Y)

32Kb x 8

Peak Reflow Temp

260 °C

Qualification

Industrial

Speed

25 ns

Features

  • 32 K × 8 nvSRAM array
  • QuantumTrap nonvolatile cells
  • AutoStore on power-down (VCAP)
  • Software STORE via 6-read sequence
  • Software RECALL via 6-read sequence
  • HSB pin: HW STORE request
  • HSB open-drain busy indicator
  • Single-supply 4.5 V to 5.5 V
  • VCAP capacitor 61 µF to 180 µF
  • Low-V inhibits write and STORE
  • 20-year data retention
  • 1,000 K STORE cycle endurance

Description

  • Retains data through power loss
  • Eliminates battery-backed SRAM
  • AutoStore saves state hands-free
  • STORE/RECALL via simple MCU reads
  • HSB busy flag avoids bus conflicts
  • Works from common 5 V rails
  • Defined VCAP range speeds design-in
  • Low-V lockout prevents corruption
  • Endurance suits frequent data logs
  • Long retention supports servicing
  • Nonvolatile backup without firmware
  • Reduces downtime after power return

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