HMC8500PM5E

PRODUCTION

10 W (40 dBm), 0.01 GHz to 2.8 GHz, GaN Power Amplifier

Analog Devices HMC8500PM5E Product Info

10 February 2026 5

Features

High small signal gain: 15.0 dB typical
P_OUT: 40 dBm typical at P_IN = 30 dBm
High PAE: 55% typical at P_IN = 30 dBm
Frequency range: 0.01 GHz to 2.8 GHz across all frequencies

V_DD = 28 V at quiescent current of 100 mA
Internal prematching
Simple and compact external tuning for optimal performance
5 mm × 5 mm, 32-lead LFCSP package

Part details & applications

The HMC8500PM5E is a gallium nitride (GaN), broadband power amplifier delivering 10 W (40 dBm), typical, with up to 55% power added efficiency (PAE) across an instantaneous bandwidth of 0.01 GHz to 2.8 GHz, at an input power of 30 dBm. The typical gain flatness is 3 dB at small signal levels.

The HMC8500PM5E is ideal for pulsed or continuous wave (CW) applications, such as wireless infrastructure, radars, public mobile radios, and general-purpose amplification.

The HMC8500PM5E amplifier is externally tuned using low cost, surface-mount components and is available in a compact LFCSP package.

Note that, throughout this data sheet, multifunction pins, such as RFIN/V_GG, are referred to either by the entire pin name or by a single function of the pin, for example, RFIN, when only that function is relevant

APPLICATIONS

Extended battery operation for public mobile radios
Power amplifier stage for wireless infrastructures
Test and measurement equipment
Commercial and military radars
General-purpose transmitter amplification

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