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HMC349ALP4CE
  • HMC349ALP4CE
  • HMC349ALP4CE

HMC349ALP4CE

PRODUCTION

High Isolation, Nonreflective, GaAs, SPDT Switch, 100 MHz to 4 GHz

Analog Devices HMC349ALP4CE Product Info

10 February 2026 5

Features

  • Nonreflective, 50 Ω design
  • High isolation: 62 dB to 2 GHz
  • Low insertion loss: 1.0 dB to 2 GHz
  • High input linearity
    • 1 dB power compression (P1dB): 34 dBm (typical)
    • Third-order intercept (IP3): 53 dBm (typical)
  • High power handling
    • 33.5 dBm through path, VDD = 5 V
    • 26.5 dBm terminated path
  • Single, positive supply: 3 V to 5 V
  • CMOS-/TTL-compatible control
  • All off state control
  • 16-lead, 4 mm × 4 mm LFCSP
  • Pin-compatible with the HMC8038

Part details & applications

The HMC349ALP4CE is a gallium arsenide (GaAs), single-pole, double throw (SPDT) switch, specified from 100 MHz to 4 GHz.

The HMC349ALP4CE is well suited for wireless infrastructure applications by yielding high isolation of 62 dB, low insertion loss of 1.0 dB, high input IP3 of 53 dBm, and high input P1dB of 34 dBm.

The HMC349ALP4CE operates with a single, positive supply voltage from 3 V to 5 V and provides a CMOS-/TTL-compatible control interface.

The HMC349ALP4CE comes in a 16-lead, 4 mm × 4 mm, RoHS compliant, lead frame chip scale package (LFCSP).

APPLICATIONS

  • Wireless infrastructure
  • Mobile radios
  • Test equipment

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