ADRF5142

RECOMMENDED FOR NEW DESIGNS

High Power, 40 W Peak, Silicon SPDT, Reflective Switch, 8 GHz to 11 GHz

Analog Devices ADRF5142 Product Info

10 February 2026 5

Features

Frequency range: 8 GHz to 11 GHz
Low insertion loss: 1.2 dB (typical)
High isolation: 40 dB (typical)
- High input linearity
- 0.1 dB power compression (P0.1dB): 46 dBm
- Third-order intercept (IP3): 70 dBm
High power handling at T_CASE = 85°C:
- Insertion loss path
Hot switching at RFC (Pin 3): 41 dBm

Fast switching time: 60 ns
0.1 dB RF settling time: 65 ns
No low frequency spurious
Positive control interface: CMOS-/LVTTL-compatible
20-lead, 3.0 mm × 3.0 mm LGA package
Pin compatible with ADRF5141 and ADRF5144

Part details & applications

The ADRF5142 is a reflective single-pole, double-throw (SPDT) switch manufactured in the silicon process.

The ADRF5142 operates from 8 GHz to 11 GHz with a 1.2 dB typical insertion loss and a 40 dB typical isolation. The device has a radio frequency (RF) input power handling capability of 41 dBm average power and 46 dBm peak power for the insertion loss path.

The ADRF5142 draws a low current of 130 μA on the positive supply of +3.3 V and 500 μA on negative supply of −3.3 V. The device employs complementary metal-oxide semiconductor (CMOS)-/lowvoltage transistor to transistor logic (LVTTL)-compatible controls. The ADRF5142 requires no additional driver circuitry, which makes it an ideal alternative to GaN and PIN diode-based switches.

The ADRF5142 comes in a 20-lead, 3.0 mm × 3.0 mm, RoHS-compliant, land grid array (LGA) package and operates from −40°C to +85°C.

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