ADG619

PRODUCTION

CMOS, ±5 V/+5 V, 4 Ω, Single SPDT Switch (Break-Before-Make Switching Action)

Analog Devices ADG619 Product Info

10 February 2026 7

Features

6.6 Ω (maximum) on resistance
0.8 Ω (maximum) on-resistance flatness
2.7 V to 5.5 V single supply
±2.7 V to ±5.5 V dual supply
Rail-to-rail operation
8-lead SOT-23, 8-lead MSOP
Typical power consumption (<0.1 μW)
TTL-/CMOS-compatible inputs

ADG619-EP supports defense and aerospace applications (AQEC standard)

Download the ADG619-EP Data Sheet (pdf file)
Military temperature range:
−55°C to +125°C
Controlled manufacturing baseline
One assembly and test site
One fabrication site
Enhanced product change notification
Qualification data available on request
V62/11608 DSCC Drawing Number

Part details & applications

The ADG619 are monolithic, CMOS single-pole double-throw (SPDT) switches. Each switch conducts equally well in both directions when the device is on.

The ADG619 offer a low on resistance of 4 Ω, which is matched to within 0.7 Ω between channels. These switches also provide low power dissipation, yet result in high switching speeds.

The ADG619 exhibits break-before-make switching action, thus preventing momentary shorting when switching channels. /p>

The ADG619 are available in an 8-lead SOT-23 and an 8-lead MSOP.

The ADG619-EP support defense and aerospace applications (AQEC standard)

Product Highlights

Low on resistance (R_ON): 4 Ω typical.
Dual ±2.7 V to ±5.5 V or single 2.7 V to 5.5 V supplies.
Low power dissipation.
Fast t_ON/t_OFF.
Tiny, 8-lead SOT-23 and 8-lead MSOP.

Applications

Automatic test equipment
Power routing
Communication systems
Data acquisition systems
Sample-and-hold systems
Avionics Relay replacement
Battery-powered systems

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