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UCC27512-EP
  • UCC27512-EP

UCC27512-EP

ACTIVE

Enhanced Product 4-A/8-A single-channel gate driver with 5-V UVLO in SON package Supports Defense, Aerospace, and Medical Applications Supports Defense, Aerospace, and Medical Applications

Texas Instruments UCC27512-EP Product Info

1 April 2026 1

Parameters

Number of channels

1

Power switch

GaNFET, IGBT, MOSFET

Peak output current (A)

8

Input supply voltage (min) (V)

4.5

Input supply voltage (max) (V)

18

Features

Hysteretic Logic

Operating temperature range (°C)

-55 to 125

Rise time (ns)

9

Fall time (ns)

7

Propagation delay time (µs)

0.013

Input threshold

CMOS, TTL

Channel input logic

Inverting, Non-Inverting

Input negative voltage (V)

0

Rating

HiRel Enhanced Product

Undervoltage lockout (typ) (V)

4

Driver configuration

Inverting, Non-Inverting

Package

WSON (DRS)-6-9 mm² 3 x 3

Features

  • Low-Cost, Gate-Driver Device Offering Superior Replacement
    of NPN and PNP Discrete Solutions
  • 4-A Peak Source and 8-A Peak Sink Asymmetrical Drive
  • Strong Sink Current Offers Enhanced Immunity Against Miller Turn On
  • Fast Propagation Delays (13-ns typical)
  • Fast Rise and Fall Times (9-ns and 7-ns typical)
  • 4.5-V to 18-V Single Supply Range
  • Outputs Held Low During VDD UVLO (ensures glitch free operation at
    power-up and power-down)
  • TTL and CMOS Compatible Input Logic Threshold,
    (independent of supply voltage)
  • Hysteretic Logic Thresholds for High Noise Immunity
  • Dual Input Design (choice of an inverting (IN- pin) or non-inverting
    (IN+ pin) driver configuration)
    • Unused Input Pin can be Used for Enable or Disable Function
  • Output Held Low when Input Pins are Floating
  • Input Pin Absolute Maximum Voltage Levels Not Restricted by VDD Pin
    Bias Supply Voltage
  • 6-Pin DRS (3mm × 3 mm WSON with exposed thermal pad) Package

Supports Defense, Aerospace, and Medical Applications

  • Controlled Baseline
  • One Assembly and Test Site
  • One Fabrication Site
  • Available in Military (–55°C to 125°C) Temperature Range
  • Extended Product Life Cycle
  • Extended Product-Change Notification
  • Product Traceability

  • Low-Cost, Gate-Driver Device Offering Superior Replacement
    of NPN and PNP Discrete Solutions
  • 4-A Peak Source and 8-A Peak Sink Asymmetrical Drive
  • Strong Sink Current Offers Enhanced Immunity Against Miller Turn On
  • Fast Propagation Delays (13-ns typical)
  • Fast Rise and Fall Times (9-ns and 7-ns typical)
  • 4.5-V to 18-V Single Supply Range
  • Outputs Held Low During VDD UVLO (ensures glitch free operation at
    power-up and power-down)
  • TTL and CMOS Compatible Input Logic Threshold,
    (independent of supply voltage)
  • Hysteretic Logic Thresholds for High Noise Immunity
  • Dual Input Design (choice of an inverting (IN- pin) or non-inverting
    (IN+ pin) driver configuration)
    • Unused Input Pin can be Used for Enable or Disable Function
  • Output Held Low when Input Pins are Floating
  • Input Pin Absolute Maximum Voltage Levels Not Restricted by VDD Pin
    Bias Supply Voltage
  • 6-Pin DRS (3mm × 3 mm WSON with exposed thermal pad) Package

Supports Defense, Aerospace, and Medical Applications

  • Controlled Baseline
  • One Assembly and Test Site
  • One Fabrication Site
  • Available in Military (–55°C to 125°C) Temperature Range
  • Extended Product Life Cycle
  • Extended Product-Change Notification
  • Product Traceability

Description

The UCC27512 single-channel, high-speed, low-side gate driver device is capable of effectively driving MOSFET and IGBT power switches. Using a design that inherently minimizes shoot-through current, UCC27512 is capable of sourcing and sinking high, peak-current pulses into capacitive loads offering rail-to-rail drive capability and extremely small propagation delay typically 13 ns.

The UCC27512 provides 4-A source, 8-A sink (asymmetrical drive) peak-drive current capability. Strong sink capability in asymmetrical drive boosts immunity against parasitic, Miller turn-on effect.

UCC27512 is designed to operate over a wide VDD range of 4.5 V to 18 V and wide temperature range of –55°C to 125°C. Internal Under Voltage Lockout (UVLO) circuitry on VDD pin holds output low outside VDD operating range. The capability to operate at low voltage levels such as below 5 V, along with best in class switching characteristics, is especially suited for driving emerging wide band-gap power switching devices such as GaN power semiconductor devices.

The UCC27512 single-channel, high-speed, low-side gate driver device is capable of effectively driving MOSFET and IGBT power switches. Using a design that inherently minimizes shoot-through current, UCC27512 is capable of sourcing and sinking high, peak-current pulses into capacitive loads offering rail-to-rail drive capability and extremely small propagation delay typically 13 ns.

The UCC27512 provides 4-A source, 8-A sink (asymmetrical drive) peak-drive current capability. Strong sink capability in asymmetrical drive boosts immunity against parasitic, Miller turn-on effect.

UCC27512 is designed to operate over a wide VDD range of 4.5 V to 18 V and wide temperature range of –55°C to 125°C. Internal Under Voltage Lockout (UVLO) circuitry on VDD pin holds output low outside VDD operating range. The capability to operate at low voltage levels such as below 5 V, along with best in class switching characteristics, is especially suited for driving emerging wide band-gap power switching devices such as GaN power semiconductor devices.

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