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FET |
Internal |
Number of channels |
1 |
Switching voltage (max) (V) |
1200 |
Supply voltage (min) (V) |
4.5 |
Supply voltage (max) (V) |
20 |
Rating |
Automotive |
Features |
2-mA avalanche current |
Withstand isolation voltage (VISO) (Vrms) |
3750 |
Imax (mA) |
50 |
Ron (typ) (Ω) |
130 |
TI functional safety category |
Functional Safety-Capable |
Operating temperature range (°C) |
-40 to 125 |
OFF-state leakage current (µA) |
1 |
Isolation rating |
Basic |
Surge isolation voltage (VIOSM) (VPK) |
5000 |
Working isolation voltage (VIOWM) (Vrms) |
1000 |
SOIC (DWQ)-11-106.09 mm² 10.3 x 10.3
The TPSI2140-Q1 is an isolated solid state relay designed for high voltage automotive and industrial applications. The TPSI2140-Q1 uses TIs high reliability capacitive isolation technology in combination with internal back-to-back MOSFETs to form a completely integrated solution requiring no secondary side power supply.
The primary side of the device is powered by only 9 mA of input current and incorporates a fail-safe EN pin preventing any possibility of back powering the VDD supply. In most applications, the VDD pin of the device should be connected to a system supply between 5 V–20 V and the EN pin of the device should be driven by a GPIO output with logic HI between 2.1 V–20 V. In other applications, The VDD and EN pins could be driven together directly from the system supply or from a GPIO output. All control configurations of the TPSI2140-Q1 do not require additional external components such as a resistor and/or low side switch that are typically required in photo relay solutions.
The secondary side consists of back-to-back MOSFETs with a standoff voltage of ±1.2 kV from S1 to S2. The TPSI2140-Q1 MOSFETs avalanche robustness and thermally conscious package design allow it to robustly support system level dielectric withstand testing (HiPot) and DC fast charger surge currents of up to 2 mA without requiring any external components.