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TPS7H6101-SEP
  • TPS7H6101-SEP

TPS7H6101-SEP

PREVIEW

Radiation-tolerant 200V 10A GaN power stage with integrated driver

Texas Instruments TPS7H6101-SEP Product Info

1 April 2026 0

Parameters

VDS (max) (V)

200

RDS(on) (mΩ)

15

Features

Dual LDO, Half-bridge, High or low-side configurable, Overtemperature protection

Rating

Space

Operating temperature range (°C)

-55 to 125

Package

UNKNOWN (NPR)-64-See data sheet

Features

  • Radiation performance:
    • Radiation lot acceptance tested (RLAT) to total ionizing dose (TID) of 50krad(Si)
    • Single-event transient (SET), single-event burnout (SEB), and single-event gate rupture (SEGR) immune up to linear energy transfer (LET) = 43MeV-cm2/mg
    • Single-event transient (SET) and single-event fault interrupt (SEFI) characterized up to (LET) = 43MeV-cm2/mg
  • 200V e-mode GaN FET half bridge
    • 15mΩRDS(ON) (typ)
    • 100kHz to 2MHz operation
  • LGA package:
    • Thermally optimized 12mm × 9mm LGA package with thermal pads
    • Integrated gate drive resistors
    • Low common source inductance packaging
    • Electrically isolated high-side and low-side
  • Flexible control for various half-bridge and two switch power supply topologies
    • Low propagation delay
    • Two operational modes
      • Single PWM input with adjustable dead time
      • Two independent inputs
    • Programmable dead time control
    • Selectable input interlock protection in independent input mode
    • 5V gate drive supply for robust FET operation
  • Radiation performance:
    • Radiation lot acceptance tested (RLAT) to total ionizing dose (TID) of 50krad(Si)
    • Single-event transient (SET), single-event burnout (SEB), and single-event gate rupture (SEGR) immune up to linear energy transfer (LET) = 43MeV-cm2/mg
    • Single-event transient (SET) and single-event fault interrupt (SEFI) characterized up to (LET) = 43MeV-cm2/mg
  • 200V e-mode GaN FET half bridge
    • 15mΩRDS(ON) (typ)
    • 100kHz to 2MHz operation
  • LGA package:
    • Thermally optimized 12mm × 9mm LGA package with thermal pads
    • Integrated gate drive resistors
    • Low common source inductance packaging
    • Electrically isolated high-side and low-side
  • Flexible control for various half-bridge and two switch power supply topologies
    • Low propagation delay
    • Two operational modes
      • Single PWM input with adjustable dead time
      • Two independent inputs
    • Programmable dead time control
    • Selectable input interlock protection in independent input mode
    • 5V gate drive supply for robust FET operation

Description

The TPS7H6101 is a radiation-tolerant 200V e-mode GaN power-FET half bridge with integrated gate driver; integration of the e-mode GaN FETs and gate driver simplifies design, reduces component count, and reduces board space. Support for half-bridge and two independent switch topologies, configurable dead time, and configurable shoot through interlock protection facilitates support for a wide variety of applications and implementations.

The TPS7H6101 is a radiation-tolerant 200V e-mode GaN power-FET half bridge with integrated gate driver; integration of the e-mode GaN FETs and gate driver simplifies design, reduces component count, and reduces board space. Support for half-bridge and two independent switch topologies, configurable dead time, and configurable shoot through interlock protection facilitates support for a wide variety of applications and implementations.

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