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TLV2332
  • TLV2332
  • TLV2332
  • TLV2332

TLV2332

ACTIVE

Dual, 8-V, 525-kHz operational amplifier

Texas Instruments TLV2332 Product Info

1 April 2026 0

Parameters

Number of channels

2

Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V)

8

Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V)

2

Rail-to-rail

In to V-, Out

GBW (typ) (MHz)

0.525

Slew rate (typ) (V/µs)

0.43

Vos (offset voltage at 25°C) (max) (mV)

9

Iq per channel (typ) (mA)

0.105

Vn at 1 kHz (typ) (nV√Hz)

32

Rating

Catalog

Operating temperature range (°C)

-40 to 85

Offset drift (typ) (µV/°C)

1.7

Input bias current (max) (pA)

200

CMRR (typ) (dB)

91

Iout (typ) (A)

0.009

Architecture

CMOS

Input common mode headroom (to negative supply) (typ) (V)

-0.3

Input common mode headroom (to positive supply) (typ) (V)

-0.8

Output swing headroom (to negative supply) (typ) (V)

0.095

Output swing headroom (to positive supply) (typ) (V)

-1.2

Package

PDIP (P)-8-92.5083 mm² 9.81 x 9.43

Features

  • Wide Range of Supply Voltages Over Specified Temperature Range:
  • TA = -40°C to 85°C...2 V to 8 V
  • Fully Characterized at 3 V and 5 V
  • Single-Supply Operation
  • Common-Mode Input-Voltage Range
    Extends Below the Negative Rail and up to
    VDD -1 V at TA = 25°C
  • Output Voltage Range Includes Negative Rail
  • High Input Impedance...1012 Typ
  • ESD-Protection Circuitry
  • Designed-In Latch-Up Immunity
  • LinCMOS is a trademark of Texas Instruments Incorporated.

  • Wide Range of Supply Voltages Over Specified Temperature Range:
  • TA = -40°C to 85°C...2 V to 8 V
  • Fully Characterized at 3 V and 5 V
  • Single-Supply Operation
  • Common-Mode Input-Voltage Range
    Extends Below the Negative Rail and up to
    VDD -1 V at TA = 25°C
  • Output Voltage Range Includes Negative Rail
  • High Input Impedance...1012 Typ
  • ESD-Protection Circuitry
  • Designed-In Latch-Up Immunity
  • LinCMOS is a trademark of Texas Instruments Incorporated.

Description

The TLV233x operational amplifiers are in a family of devices that has been specifically designed for use in low-voltage single-supply applications. Unlike the TLV2322 which is optimized for ultra-low power, the TLV233x is designed to provide a combination of low power and good ac performance. Each amplifier is fully functional down to a minimum supply voltage of 2 V, is fully characterized, tested, and specified at both 3-V and 5-V power supplies. The common-mode input-voltage range includes the negative rail and extends to within 1 V of the positive rail.

Having a maximum supply current of only 310 uA per amplifier over full temperature range, the TLV233x devices offer a combination of good ac performance and microampere supply currents. From a 3-V power supply, the amplifier's typical slew rate is 0.38 V/us and its bandwidth is 300 kHz.

These amplifiers offer a level of ac performance greater than that of many other devices operating at comparable power levels. The TLV233x operational amplifiers are especially well suited for use in low-current or battery-powered applications.

Low-voltage and low-power operation has been made possible by using the Texas Instruments silicon-gate LinCMOSTM technology. The LinCMOS process also features extremely high input impedance and ultra-low bias currents making these amplifiers ideal for interfacing to high-impedance sources such as sensor circuits or filter applications.

To facilitate the design of small portable equipment, the TLV233x is made available in a wide range of package options, including the small-outline and thin-shrink small-outline package (TSSOP). The TSSOP package has significantly reduced dimensions compared to a standard surface-mount package. Its maximum height of only 1.1 mm makes it particularly attractive when space is critical.

The device inputs and outputs are designed to withstand -100-mA currents without sustaining latch-up. The TLV233x incorporates internal ESD-protection circuits that prevents functional failures at voltages up to 2000 V as tested under MIL-STD 883C, Method 3015.2; however, care should be exercised in handling these devices as exposure to ESD may result in the degradation of the device parametric performance.

The TLV233x operational amplifiers are in a family of devices that has been specifically designed for use in low-voltage single-supply applications. Unlike the TLV2322 which is optimized for ultra-low power, the TLV233x is designed to provide a combination of low power and good ac performance. Each amplifier is fully functional down to a minimum supply voltage of 2 V, is fully characterized, tested, and specified at both 3-V and 5-V power supplies. The common-mode input-voltage range includes the negative rail and extends to within 1 V of the positive rail.

Having a maximum supply current of only 310 uA per amplifier over full temperature range, the TLV233x devices offer a combination of good ac performance and microampere supply currents. From a 3-V power supply, the amplifier's typical slew rate is 0.38 V/us and its bandwidth is 300 kHz.

These amplifiers offer a level of ac performance greater than that of many other devices operating at comparable power levels. The TLV233x operational amplifiers are especially well suited for use in low-current or battery-powered applications.

Low-voltage and low-power operation has been made possible by using the Texas Instruments silicon-gate LinCMOSTM technology. The LinCMOS process also features extremely high input impedance and ultra-low bias currents making these amplifiers ideal for interfacing to high-impedance sources such as sensor circuits or filter applications.

To facilitate the design of small portable equipment, the TLV233x is made available in a wide range of package options, including the small-outline and thin-shrink small-outline package (TSSOP). The TSSOP package has significantly reduced dimensions compared to a standard surface-mount package. Its maximum height of only 1.1 mm makes it particularly attractive when space is critical.

The device inputs and outputs are designed to withstand -100-mA currents without sustaining latch-up. The TLV233x incorporates internal ESD-protection circuits that prevents functional failures at voltages up to 2000 V as tested under MIL-STD 883C, Method 3015.2; however, care should be exercised in handling these devices as exposure to ESD may result in the degradation of the device parametric performance.

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