0
Protocols |
DDR2 |
Configuration |
4:1 |
Number of channels |
11 |
Bandwidth (MHz) |
400 |
Supply voltage (max) (V) |
1.9 |
Supply voltage (min) (V) |
1.7 |
Ron (typ) (mΩ) |
10000 |
Input/output voltage (min) (V) |
0 |
Input/output voltage (max) (V) |
1.9 |
Supply current (typ) (µA) |
700 |
ESD HBM (typ) (kV) |
2.5 |
Operating temperature range (°C) |
0 to 85 |
ESD CDM (kV) |
0.75 |
Input/output continuous current (max) (mA) |
100 |
COFF (typ) (pF) |
2.5 |
CON (typ) (pF) |
4.6 |
OFF-state leakage current (max) (µA) |
10 |
Propagation delay time (µs) |
0.000297 |
Ron (max) (mΩ) |
17000 |
RON flatness (typ) (Ω) |
1.5 |
Turnoff time (disable) (max) (ns) |
2.1 |
Turnon time (enable) (max) (ns) |
2.1 |
VIH (min) (V) |
1.1 |
VIL (max) (V) |
0.66 |
Rating |
Catalog |
NFBGA (ZST)-72-49 mm² 7 x 7
The SN74CBTU4411 device is a high-bandwidth, SSTL_18 compatible FET multiplexer/demultiplexer with low ON-state resistance (ron). The device uses an internal charge pump to elevate the gate voltage of the pass transistor, providing a low and flat ron. The low and flat ron allows for minimal propagation delay and supports rail-to-rail signaling on data input/output (I/O) ports. The device also features very low data I/O capacitance to minimize capacitive loading and signal distortion on the data bus. Matched ron and I/O capacitance among channels results in extremely low differential and rising or falling edge skew. This allows the device to show optimal performance in DDR-II applications.