0
Protocols |
Analog |
Configuration |
8:1 |
Number of channels |
1 |
Bandwidth (MHz) |
500 |
Supply voltage (max) (V) |
3.6 |
Ron (typ) (mΩ) |
3500 |
Input/output voltage (min) (V) |
0 |
Input/output voltage (max) (V) |
5.5 |
Supply current (typ) (µA) |
600 |
Operating temperature range (°C) |
-40 to 85 |
ESD CDM (kV) |
1 |
Input/output continuous current (max) (mA) |
64 |
COFF (typ) (pF) |
3.5 |
CON (typ) (pF) |
15 |
OFF-state leakage current (max) (µA) |
1 |
Ron (max) (mΩ) |
11000 |
VIH (min) (V) |
1.7 |
VIL (max) (V) |
0.8 |
Rating |
Catalog |
SSOP (DBQ)-16-29.4 mm² 4.9 x 6
The SN74CB3Q3251 is a high-bandwidth FET bus switch utilizing a charge pump to elevate the gate voltage of the pass transistor, providing a low and flat ON-state resistance (ron). The low and flat ON-state resistance allows for minimal propagation delay and supports rail-to-rail switching on the data input/output (I/O) ports. The device also features low data I/O capacitance to minimize capacitive loading and signal distortion on the data bus. Specifically designed to support high-bandwidth applications, the SN74CB3Q3251 provides an optimized interface solution ideally suited for broadband communications, networking, and data-intensive computing systems.
The SN74CB3Q3251 is a 1-of-8 multiplexer/demultiplexer with a single output-enable (OE) input. The select (S0, S1, S2) inputs control the data path of the multiplexer/demultiplexer. When OE is low, the multiplexer/demultiplexer is enabled, and the A port is connected to the B port, allowing bidirectional data flow between ports. When OE is high, the multiplexer/demultiplexer is disabled, and a high-impedance state exists between the A and B ports.
This device is fully specified for partial-power-down applications using Ioff. The Ioff circuitry prevents damaging current backflow through the device when it is powered down. The device has isolation during power off.
To ensure the high-impedance state during power up or power down, OE should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.