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SN74CB3Q3251
  • SN74CB3Q3251
  • SN74CB3Q3251
  • SN74CB3Q3251
  • SN74CB3Q3251

SN74CB3Q3251

ACTIVE

3.3-V, 8:1, 1-channel general-purpose FET bus switch

Texas Instruments SN74CB3Q3251 Product Info

1 April 2026 1

Parameters

Protocols

Analog

Configuration

8:1

Number of channels

1

Bandwidth (MHz)

500

Supply voltage (max) (V)

3.6

Ron (typ) (mΩ)

3500

Input/output voltage (min) (V)

0

Input/output voltage (max) (V)

5.5

Supply current (typ) (µA)

600

Operating temperature range (°C)

-40 to 85

ESD CDM (kV)

1

Input/output continuous current (max) (mA)

64

COFF (typ) (pF)

3.5

CON (typ) (pF)

15

OFF-state leakage current (max) (µA)

1

Ron (max) (mΩ)

11000

VIH (min) (V)

1.7

VIL (max) (V)

0.8

Rating

Catalog

Package

SSOP (DBQ)-16-29.4 mm² 4.9 x 6

Features

  • High-Bandwidth Data Path (up to 500 MHz (1))
  • Equivalent to IDTQS3VH251 Device
  • 5-V Tolerant I/Os With Device Powered Up or Powered Down
  • Low and Flat ON-State Resistance (ron) Characteristics Over Operating Range (ron = 4
  • High-Bandwidth Data Path (up to 500 MHz (1))
  • Equivalent to IDTQS3VH251 Device
  • 5-V Tolerant I/Os With Device Powered Up or Powered Down
  • Low and Flat ON-State Resistance (ron) Characteristics Over Operating Range (ron = 4

Description

The SN74CB3Q3251 is a high-bandwidth FET bus switch utilizing a charge pump to elevate the gate voltage of the pass transistor, providing a low and flat ON-state resistance (ron). The low and flat ON-state resistance allows for minimal propagation delay and supports rail-to-rail switching on the data input/output (I/O) ports. The device also features low data I/O capacitance to minimize capacitive loading and signal distortion on the data bus. Specifically designed to support high-bandwidth applications, the SN74CB3Q3251 provides an optimized interface solution ideally suited for broadband communications, networking, and data-intensive computing systems.

The SN74CB3Q3251 is a 1-of-8 multiplexer/demultiplexer with a single output-enable (OE) input. The select (S0, S1, S2) inputs control the data path of the multiplexer/demultiplexer. When OE is low, the multiplexer/demultiplexer is enabled, and the A port is connected to the B port, allowing bidirectional data flow between ports. When OE is high, the multiplexer/demultiplexer is disabled, and a high-impedance state exists between the A and B ports.

This device is fully specified for partial-power-down applications using Ioff. The Ioff circuitry prevents damaging current backflow through the device when it is powered down. The device has isolation during power off.

To ensure the high-impedance state during power up or power down, OE should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.

The SN74CB3Q3251 is a high-bandwidth FET bus switch utilizing a charge pump to elevate the gate voltage of the pass transistor, providing a low and flat ON-state resistance (ron). The low and flat ON-state resistance allows for minimal propagation delay and supports rail-to-rail switching on the data input/output (I/O) ports. The device also features low data I/O capacitance to minimize capacitive loading and signal distortion on the data bus. Specifically designed to support high-bandwidth applications, the SN74CB3Q3251 provides an optimized interface solution ideally suited for broadband communications, networking, and data-intensive computing systems.

The SN74CB3Q3251 is a 1-of-8 multiplexer/demultiplexer with a single output-enable (OE) input. The select (S0, S1, S2) inputs control the data path of the multiplexer/demultiplexer. When OE is low, the multiplexer/demultiplexer is enabled, and the A port is connected to the B port, allowing bidirectional data flow between ports. When OE is high, the multiplexer/demultiplexer is disabled, and a high-impedance state exists between the A and B ports.

This device is fully specified for partial-power-down applications using Ioff. The Ioff circuitry prevents damaging current backflow through the device when it is powered down. The device has isolation during power off.

To ensure the high-impedance state during power up or power down, OE should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.

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