0
Type |
Active Balun |
Frequency (min) (MHz) |
3200 |
Frequency (max) (MHz) |
4200 |
Gain (typ) (dB) |
18.8 |
Noise figure (typ) (dB) |
3.8 |
OIP3 (typ) (dBm) |
31.5 |
P1dB (typ) (dBm) |
18 |
Frequency of harmonic distortion measurement (GHz) |
3.5 |
Supply voltage (V) |
3.3 |
Current consumption (mA) |
120 |
Number of channels |
1 |
Operating temperature range (°C) |
-40 to 105 |
Rating |
Catalog |
Output enable |
Yes |
WQFN (RRL)-12-4 mm² 2 x 2
LMH9135 are high-performance, single-channel, differential input to single-ended output transmit radio frequency (RF) gain block amplifiers that support 3.2 – 4.2 GHz frequency band. The device can support the requirements for next generation 5G active antenna systems (AAS) or small-cell applications while driving the input of a power amplifier (PA). The RF amplifier provides 18 dB typical gain with good linearity performance of +31.5 dBm Output IP3, while maintaining less than 4 dB noise figure across the whole 1 dB bandwidth. The device is internally matched for 100-Ω differential input impedance providing easy interface with an RF-sampling or Zero-IF analog front-end (AFE) at the input. Also, the device is internally matched for 50-Ω single-ended output impedance that is required to easily interface with a post-amplifier, surface acoustic wave (SAW) filter, or power amplifier (PA).
Operating on a single 3.3 V supply, the device consumes about 395 mW typical active power making it suitable for high-density 5G massive MIMO applications. Also, the device is available in a space saving 2 mm x 2 mm, 12-pin QFN package. The device is rated for an operating temperature of up to 105°C to provide a robust system design. There is a 1.8-V JEDEC compliant power down pin available for fast power down and power up of the device suitable for time division duplex (TDD) systems.