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SN74AUP1G02
  • SN74AUP1G02
  • SN74AUP1G02
  • SN74AUP1G02
  • SN74AUP1G02
  • SN74AUP1G02
  • SN74AUP1G02
  • SN74AUP1G02
  • SN74AUP1G02
  • SN74AUP1G02

SN74AUP1G02

ACTIVE

Single 2-input, 0.8-V to 3.6-V low power NOR gate

Texas Instruments SN74AUP1G02 Product Info

1 April 2026 1

Parameters

Technology family

AUP

Number of channels

1

Supply voltage (min) (V)

0.8

Supply voltage (max) (V)

3.6

Inputs per channel

2

IOL (max) (mA)

4

IOH (max) (mA)

-4

Output type

Push-Pull

Input type

Standard CMOS

Features

Over-voltage tolerant Inputs, Partial power down (Ioff), Very high speed (tpd 5-10ns)

Data rate (max) (Mbps)

100

Rating

Catalog

Operating temperature range (°C)

-40 to 85

Package

DSBGA (YFP)-6-1.4000000000000001 mm² 1 x 1.4000000000000001

Features

  • Available in the Ultra Small 0.64 mm2 Package (DPW) with 0.5-mm Pitch
  • Low Static-Power Consumption
    (ICC = 0.9 µA Max)
  • Low Dynamic-Power Consumption
    (Cpd = 4.3 pF Typ at 3.3 V)
  • Low Input Capacitance (Ci = 1.5 pF Typ)
  • Low Noise – Overshoot and Undershoot
    <10% of VCC
  • Ioff Supports Live Insertion, Partial-Power-Down Mode, and Back-Drive Protection
  • Input Hysteresis Allows Slow Input Transition and Better Switching-Noise Immunity at the Input
    (Vhys = 250 mV Typ at 3.3 V)
  • Wide Operating VCC Range of 0.8 V to 3.6 V
  • Optimized for 3.3-V Operation
  • 3.6-V I/O Tolerant to Support Mixed-Mode Signal Operation
  • tpd = 4.6 ns Max at 3.3 V
  • Suitable for Point-to-Point Applications
  • Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
  • ESD Performance Tested Per JESD 22
    • 2000-V Human-Body Model
      (A114-B, Class II)
    • 1000-V Charged-Device Model (C101)
  • Available in the Ultra Small 0.64 mm2 Package (DPW) with 0.5-mm Pitch
  • Low Static-Power Consumption
    (ICC = 0.9 µA Max)
  • Low Dynamic-Power Consumption
    (Cpd = 4.3 pF Typ at 3.3 V)
  • Low Input Capacitance (Ci = 1.5 pF Typ)
  • Low Noise – Overshoot and Undershoot
    <10% of VCC
  • Ioff Supports Live Insertion, Partial-Power-Down Mode, and Back-Drive Protection
  • Input Hysteresis Allows Slow Input Transition and Better Switching-Noise Immunity at the Input
    (Vhys = 250 mV Typ at 3.3 V)
  • Wide Operating VCC Range of 0.8 V to 3.6 V
  • Optimized for 3.3-V Operation
  • 3.6-V I/O Tolerant to Support Mixed-Mode Signal Operation
  • tpd = 4.6 ns Max at 3.3 V
  • Suitable for Point-to-Point Applications
  • Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
  • ESD Performance Tested Per JESD 22
    • 2000-V Human-Body Model
      (A114-B, Class II)
    • 1000-V Charged-Device Model (C101)

Description

This single 2-input positive-NOR gate performs the Boolean function Y = A + B or Y = A × B in positive logic.

This single 2-input positive-NOR gate performs the Boolean function Y = A + B or Y = A × B in positive logic.

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