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SN65C1168E-SEP
  • SN65C1168E-SEP
  • SN65C1168E-SEP

SN65C1168E-SEP

ACTIVE

Radiation hardened RS-422 dual differential drivers and receivers in space Enhanced Plastic

Texas Instruments SN65C1168E-SEP Product Info

1 April 2026 0

Parameters

Number of receivers

2

Number of transmitters

2

Duplex

Full

Supply voltage (nom) (V)

5

Signaling rate (max) (Mbps)

10

IEC 61000-4-2 contact (±V)

8000

Fault protection (V)

-10 to 15

Common-mode range (V)

-7 to 7

Number of nodes

32

Features

IEC ESD protection

Isolated

No

Supply current (max) (µA)

17000

Rating

Space

Operating temperature range (°C)

-55 to 125

Package

TSSOP (PW)-16-32 mm² 5 x 6.4

Features

  • VID V62/19606
  • Radiation hardened
    • Single event latch-up (SEL) immune to 43 MeV-cm2/mg at 125°C
    • ELDRS-free to 30 krad(Si)
    • Total ionizing dose (TID) RLAT for every wafer lot up to 20 krad(Si)
  • Space Enhanced Plastic
    • Controlled baseline
    • Gold wire
    • NiPdAu lead finish
    • One assembly and test site
    • One fabrication site
    • Available in military (–55°C to 125°C) temperature range
    • Extended product life cycle
    • Extended product-change notification
    • Product traceability
    • Enhanced mold compound for low outgassing
  • Meet or exceed standards TIA/EIA-422-B and ITU recommendation V.11
  • Operate from single 5-V power supply
  • ESD protection for RS-422 bus pins
    • ±12-kV human-body model (HBM)
    • ±8-kV IEC 61000-4-2, contact discharge
    • ±8-kV IEC 61000-4-2, air-gap discharge
  • Low-pulse skew
  • Receiver input impedance . . . 17 kΩ (typical)
  • Receiver input sensitivity . . . ±200 mV
  • Receiver common-mode input voltage range of
    –7 V to 7 V
  • Glitch-free power-up/power-down protection
  • VID V62/19606
  • Radiation hardened
    • Single event latch-up (SEL) immune to 43 MeV-cm2/mg at 125°C
    • ELDRS-free to 30 krad(Si)
    • Total ionizing dose (TID) RLAT for every wafer lot up to 20 krad(Si)
  • Space Enhanced Plastic
    • Controlled baseline
    • Gold wire
    • NiPdAu lead finish
    • One assembly and test site
    • One fabrication site
    • Available in military (–55°C to 125°C) temperature range
    • Extended product life cycle
    • Extended product-change notification
    • Product traceability
    • Enhanced mold compound for low outgassing
  • Meet or exceed standards TIA/EIA-422-B and ITU recommendation V.11
  • Operate from single 5-V power supply
  • ESD protection for RS-422 bus pins
    • ±12-kV human-body model (HBM)
    • ±8-kV IEC 61000-4-2, contact discharge
    • ±8-kV IEC 61000-4-2, air-gap discharge
  • Low-pulse skew
  • Receiver input impedance . . . 17 kΩ (typical)
  • Receiver input sensitivity . . . ±200 mV
  • Receiver common-mode input voltage range of
    –7 V to 7 V
  • Glitch-free power-up/power-down protection

Description

The SN65C1168E-SEP consists of dual drivers and dual receivers with ±12-kV ESD (HBM) and ±8-kV ESD (IEC61000-4-2 Air-Gap Discharge and Contact Discharge) for RS-422 bus pins. The device meets the requirements of TIA/EIA-422-B and ITU recommendation V.11. Some parameters do not meet all TIA/EIA-422-B and ITU recommendation V.11 requirements after 20-krad(Si) TID exposure.

The SN65C1168E-SEP drivers have individual active-high enables.

The SN65C1168E-SEP consists of dual drivers and dual receivers with ±12-kV ESD (HBM) and ±8-kV ESD (IEC61000-4-2 Air-Gap Discharge and Contact Discharge) for RS-422 bus pins. The device meets the requirements of TIA/EIA-422-B and ITU recommendation V.11. Some parameters do not meet all TIA/EIA-422-B and ITU recommendation V.11 requirements after 20-krad(Si) TID exposure.

The SN65C1168E-SEP drivers have individual active-high enables.

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