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DRV8363
  • DRV8363
  • DRV8363
  • DRV8363

DRV8363

ACTIVE

85V (max) 3-phase smart gate driver with current shunt amplifiers

Texas Instruments DRV8363 Product Info

1 April 2026 0

Parameters

Rating

Catalog

Architecture

Gate driver

Vs ABS (max) (V)

85

Operating temperature range (°C)

-40 to 150

Package

VQFN (RGZ)-48-49 mm² 7 x 7

Features

  • Three phase half-bridge gate driver
    • Drives six N-channel MOSFETs (NMOS)
    • 8 to 85V wide operating voltage range
    • Bootstrap architecture for high-side gate driver
    • Supports 50mA average gate switching current enables driving 400nC MOSFETs at 20kHz
    • Trickle charge pump to support 100% PWM duty cycle and to generate overdrive supply to drive external cut-off or reverse polarity protection circuit
  • Smart Gate Drive architecture
    • 15-level configurable peak gate drive current up to 1000 / 2000mA (source / sink)
    • Closed-loop automatic deadtime insertion based on gate-source voltage monitoring
    • Configurable soft shutdown to minimize inductive voltage spikes during overcurrent shutdown
  • Low-side Current Sense Amplifier
    • 1mV low input offset across temperature
    • 4-level adjustable gain
    • Adjustable output bias to support unidirectional or bidirectional sensing
  • SPI-based detailed configuration and diagnostics
  • DRVOFF pin to disable driver independently
  • High voltage wake up pin (nSLEEP)
  • Dedicated ASCIN pin to control motor braking (active short circuit)
  • 6x, 3x, 1x, and Independent PWM Modes
  • Supports 3.3V and 5V Logic Inputs
  • Integrated protection features
    • Battery and power supply voltage monitors
    • MOSFET VDS and Rsense over current monitors
    • MOSFET VGS gate fault monitors
    • Device thermal warning and shutdown
    • Fault condition indicator pin
  • Three phase half-bridge gate driver
    • Drives six N-channel MOSFETs (NMOS)
    • 8 to 85V wide operating voltage range
    • Bootstrap architecture for high-side gate driver
    • Supports 50mA average gate switching current enables driving 400nC MOSFETs at 20kHz
    • Trickle charge pump to support 100% PWM duty cycle and to generate overdrive supply to drive external cut-off or reverse polarity protection circuit
  • Smart Gate Drive architecture
    • 15-level configurable peak gate drive current up to 1000 / 2000mA (source / sink)
    • Closed-loop automatic deadtime insertion based on gate-source voltage monitoring
    • Configurable soft shutdown to minimize inductive voltage spikes during overcurrent shutdown
  • Low-side Current Sense Amplifier
    • 1mV low input offset across temperature
    • 4-level adjustable gain
    • Adjustable output bias to support unidirectional or bidirectional sensing
  • SPI-based detailed configuration and diagnostics
  • DRVOFF pin to disable driver independently
  • High voltage wake up pin (nSLEEP)
  • Dedicated ASCIN pin to control motor braking (active short circuit)
  • 6x, 3x, 1x, and Independent PWM Modes
  • Supports 3.3V and 5V Logic Inputs
  • Integrated protection features
    • Battery and power supply voltage monitors
    • MOSFET VDS and Rsense over current monitors
    • MOSFET VGS gate fault monitors
    • Device thermal warning and shutdown
    • Fault condition indicator pin

Description

The DRV8363 is an integrated smart gate driver for 48V three-phase BLDC applications. The device provides three half-bridge gate drivers, each capable of driving high-side and low-side N-channel power MOSFETs. The DRV8363 generates the correct gate drive voltages using an external 12V supply and an integrated bootstrap diode for the high-side MOSFETs. The Smart Gate Drive architecture supports configurable peak gate drive current from 16mA up to 1A source and 2A sink. The DRV8363 can operate with a wide input range from 8V to 85V at the motor connection. A trickle charge pump allows for the gate drivers to support 100% PWM duty cycle control and provides overdrive gate drive voltage of external switches.

The DRV8363 provides low-side current sense amplifiers to support resistor based low-side current sensing. The low offset of the amplifiers enables the system to obtain precise motor current measurements.

A wide range of diagnostics and protection features are integrated with the DRV8363 enables a robust motor drive system design and helps eliminate the need of external components. The highly configurable device response allows the device to be integrated seamlessly into a variety of system designs.

The DRV8363 is an integrated smart gate driver for 48V three-phase BLDC applications. The device provides three half-bridge gate drivers, each capable of driving high-side and low-side N-channel power MOSFETs. The DRV8363 generates the correct gate drive voltages using an external 12V supply and an integrated bootstrap diode for the high-side MOSFETs. The Smart Gate Drive architecture supports configurable peak gate drive current from 16mA up to 1A source and 2A sink. The DRV8363 can operate with a wide input range from 8V to 85V at the motor connection. A trickle charge pump allows for the gate drivers to support 100% PWM duty cycle control and provides overdrive gate drive voltage of external switches.

The DRV8363 provides low-side current sense amplifiers to support resistor based low-side current sensing. The low offset of the amplifiers enables the system to obtain precise motor current measurements.

A wide range of diagnostics and protection features are integrated with the DRV8363 enables a robust motor drive system design and helps eliminate the need of external components. The highly configurable device response allows the device to be integrated seamlessly into a variety of system designs.

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