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DRV8163-Q1
  • DRV8163-Q1

DRV8163-Q1

ACTIVE

Automotive 48V half-bridge motor driver with diagnostics and internal current sense

Texas Instruments DRV8163-Q1 Product Info

1 April 2026 0

Parameters

Number of full bridges

1/2

Vs (min) (V)

4.5

Vs ABS (max) (V)

70

Peak output current (A)

36

RDS(ON) (HS + LS) (mΩ)

42

Sleep current (µA)

5

Control mode

PH/EN, PWM

Control interface

Hardware (GPIO), SPI

Features

Current Regulation, Current sense Amplifier, Integrated Current Sensing, Open-Load Detection

Topology

Integrated FET

Rating

Automotive

TI functional safety category

Functional Safety-Capable

Operating temperature range (°C)

-40 to 125

Package

VQFN-HR (VAK)-15-21 mm² 3.5 x 6

Features

  • AEC-Q100 qualified for automotive applications:
    • Temperature grade 1: –40°C to +125°C, TA

  • Functional Safety-Compliant Targeted

    • Documentation available to aid functional safety system design
  • 4.5V to 65V (70V abs. max) operating range
  • DRV8163-Q1MOSFET ON resistance (HS + LS): 43mΩ
  • Maximum output current = 40A
  • 2 Interface options - HW or SPI
  • PWM frequency operation up to 100kHz with automatic dead time assertion
  • Configurable slew rate and spread spectrum clocking for low electromagnetic interference (EMI)
  • Integrated current sense (eliminates shunt resistor)
  • Proportional load current output on IPROPI

  • Die temperature monitoring on IPROPI (SPI only)

  • Configurable current regulation
  • Protection and diagnostic features with configurable fault reaction (latched or retry)
    • Load diagnostics in both the off-state and on-state to detect open load and short circuit
    • Voltage monitoring on supply (VM)
    • Over current protection

    • Over temperature warning (SPI only)

    • Over temperature protection
    • Fault indication on nFAULT pin
  • Supports 1.8V, 3.3V, 5V logic inputs
  • Low sleep current - 7µA typical at 25°C
  • Device family comparison table

  • AEC-Q100 qualified for automotive applications:
    • Temperature grade 1: –40°C to +125°C, TA

  • Functional Safety-Compliant Targeted

    • Documentation available to aid functional safety system design
  • 4.5V to 65V (70V abs. max) operating range
  • DRV8163-Q1MOSFET ON resistance (HS + LS): 43mΩ
  • Maximum output current = 40A
  • 2 Interface options - HW or SPI
  • PWM frequency operation up to 100kHz with automatic dead time assertion
  • Configurable slew rate and spread spectrum clocking for low electromagnetic interference (EMI)
  • Integrated current sense (eliminates shunt resistor)
  • Proportional load current output on IPROPI

  • Die temperature monitoring on IPROPI (SPI only)

  • Configurable current regulation
  • Protection and diagnostic features with configurable fault reaction (latched or retry)
    • Load diagnostics in both the off-state and on-state to detect open load and short circuit
    • Voltage monitoring on supply (VM)
    • Over current protection

    • Over temperature warning (SPI only)

    • Over temperature protection
    • Fault indication on nFAULT pin
  • Supports 1.8V, 3.3V, 5V logic inputs
  • Low sleep current - 7µA typical at 25°C
  • Device family comparison table

Description

The DRV8163-Q1 is a wide-voltage, high-power fully integrated half-bridge driver for 24V and 48V automotive applications. Designed in a BiCMOS high-power process technology node, this device in a power package offers excellent power handling and thermal capability while providing compact package size, ease of layout, EMI control, accurate current sense, robustness, and diagnostic capability.

The device integrates a N-channel half-bridge, charge pump, high-side current sensing with regulation, current proportional output, and protection circuitry. The integrated sensing uses a current mirror, removing the need for shunt resistors, saving board area, and reducing system cost. A low-power sleep mode is provided to achieve low quiescent current.

The device offers voltage monitoring and load diagnostics, as well as protection features against overcurrent and overtemperature. Fault conditions are indicated on the nFAULT pin. The device is available in two variants: HW interface and SPI. The SPI variant offers more flexibility in device configuration and fault observability.

The DRV8163-Q1 is a wide-voltage, high-power fully integrated half-bridge driver for 24V and 48V automotive applications. Designed in a BiCMOS high-power process technology node, this device in a power package offers excellent power handling and thermal capability while providing compact package size, ease of layout, EMI control, accurate current sense, robustness, and diagnostic capability.

The device integrates a N-channel half-bridge, charge pump, high-side current sensing with regulation, current proportional output, and protection circuitry. The integrated sensing uses a current mirror, removing the need for shunt resistors, saving board area, and reducing system cost. A low-power sleep mode is provided to achieve low quiescent current.

The device offers voltage monitoring and load diagnostics, as well as protection features against overcurrent and overtemperature. Fault conditions are indicated on the nFAULT pin. The device is available in two variants: HW interface and SPI. The SPI variant offers more flexibility in device configuration and fault observability.

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