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CSD16325Q5
  • CSD16325Q5

CSD16325Q5

ACTIVE

25-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 2.2 mOhm

Texas Instruments CSD16325Q5 Product Info

1 April 2026 0

Parameters

VDS (V)

25

VGS (V)

10

Type

N-channel

Configuration

Single

Rds(on) at VGS=4.5 V (max) (mΩ)

2.2

VGSTH typ (typ) (V)

1.1

QG (typ) (nC)

18

QGD (typ) (nC)

3.5

QGS (typ) (nC)

6.6

ID - silicon limited at TC=25°C (A)

33

ID - package limited (A)

100

Logic level

Yes

Rating

Catalog

Operating temperature range (°C)

-55 to 150

Package

VSON-CLIP (DQH)-8-30 mm² 6 x 5

Features

  • Optimized for 5 V Gate Drive
  • Ultralow Q g and Q gd
  • Low Thermal Resistance
  • Avalanche Rated
  • Pb Free Terminal Plating
  • RoHS Compliant
  • Halogen Free
  • SON 5-mm × 6-mm Plastic Package
  • Optimized for 5 V Gate Drive
  • Ultralow Q g and Q gd
  • Low Thermal Resistance
  • Avalanche Rated
  • Pb Free Terminal Plating
  • RoHS Compliant
  • Halogen Free
  • SON 5-mm × 6-mm Plastic Package

Description

The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications and optimized for 5 V gate drive applications.

The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications and optimized for 5 V gate drive applications.

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