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CSD17579Q5A
  • CSD17579Q5A
  • CSD17579Q5A

CSD17579Q5A

ACTIVE

30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 13.3 mOhm

Texas Instruments CSD17579Q5A Product Info

1 April 2026 0

Parameters

VDS (V)

30

VGS (V)

20

Type

N-channel

Configuration

Single

Rds(on) at VGS=10 V (max) (mΩ)

9.7

Rds(on) at VGS=4.5 V (max) (mΩ)

13.3

VGSTH typ (typ) (V)

1.5

QG (typ) (nC)

5.4

QGD (typ) (nC)

1.2

QGS (typ) (nC)

2.3

ID - silicon limited at TC=25°C (A)

46

ID - package limited (A)

25

Logic level

Yes

Rating

Catalog

Operating temperature range (°C)

-55 to 150

Package

VSONP (DQJ)-8-29.4 mm² 4.9 x 6

Features

  • Low Qg and Qgd
  • Low RDS(on)
  • Low Thermal Resistance
  • Avalanche Rated
  • Pb-Free Terminal Plating
  • RoHS Compliant
  • Halogen Free
  • SON 5 mm × 6 mm Plastic Package
  • Low Qg and Qgd
  • Low RDS(on)
  • Low Thermal Resistance
  • Avalanche Rated
  • Pb-Free Terminal Plating
  • RoHS Compliant
  • Halogen Free
  • SON 5 mm × 6 mm Plastic Package

Description

This 30 V, 8.4 mΩ, SON 5 mm × 6mm NexFET™ power MOSFET is designed to minimize losses in power conversion applications.

This 30 V, 8.4 mΩ, SON 5 mm × 6mm NexFET™ power MOSFET is designed to minimize losses in power conversion applications.

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