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CSD85301Q2
  • CSD85301Q2
  • CSD85301Q2

CSD85301Q2

ACTIVE

20-V, N channel NexFET™ power MOSFET, dual SON 2 mm x 2 mm, 27 mOhm, gate ESD protection

Texas Instruments CSD85301Q2 Product Info

1 April 2026 7

Parameters

VDS (V)

20

VGS (V)

10

Type

N-channel

Configuration

Dual

Rds(on) at VGS=4.5 V (max) (mΩ)

27

Rds(on) at VGS=2.5 V (max) (mΩ)

39

VGSTH typ (typ) (V)

0.9

QG (typ) (nC)

4.2

QGD (typ) (nC)

1

QGS (typ) (nC)

1.1

ID - silicon limited at TC=25°C (A)

5

ID - package limited (A)

5

Logic level

Yes

Rating

Catalog

Operating temperature range (°C)

-55 to 150

Package

WSON (DLV)-6-4 mm² 2 x 2

Features

  • Low on-resistance
  • Dual independent MOSFETs
  • Space saving SON 2mm × 2mm plastic package
  • Optimized for 5V gate driver
  • Avalanche rated
  • Pb and halogen free
  • RoHS compliant
  • Low on-resistance
  • Dual independent MOSFETs
  • Space saving SON 2mm × 2mm plastic package
  • Optimized for 5V gate driver
  • Avalanche rated
  • Pb and halogen free
  • RoHS compliant

Description

The CSD85301Q2 is a 20V, 23mΩ N-Channel device with dual independent MOSFETs in a SON 2mm x 2mm plastic package. The two FETs were designed to be used in a half bridge configuration for synchronous buck and other power supply applications. Additionally, this part can be used for adaptor, USB input protection and battery charging applications. The dual FETs feature low drain to source on-resistance that minimizes losses and offers low component count for space constrained applications.

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