0
ACTIVE
VDS (V) |
20 |
VGS (V) |
10 |
Type |
N-channel |
Configuration |
Dual |
Rds(on) at VGS=4.5 V (max) (mΩ) |
27 |
Rds(on) at VGS=2.5 V (max) (mΩ) |
39 |
VGSTH typ (typ) (V) |
0.9 |
QG (typ) (nC) |
4.2 |
QGD (typ) (nC) |
1 |
QGS (typ) (nC) |
1.1 |
ID - silicon limited at TC=25°C (A) |
5 |
ID - package limited (A) |
5 |
Logic level |
Yes |
Rating |
Catalog |
Operating temperature range (°C) |
-55 to 150 |
WSON (DLV)-6-4 mm² 2 x 2
The CSD85301Q2 is a 20V, 23mΩ N-Channel device with dual independent MOSFETs in a SON 2mm x 2mm plastic package. The two FETs were designed to be used in a half bridge configuration for synchronous buck and other power supply applications. Additionally, this part can be used for adaptor, USB input protection and battery charging applications. The dual FETs feature low drain to source on-resistance that minimizes losses and offers low component count for space constrained applications.
WELL LINK CHIPS GROUP CO.,LIMITED FLAT/RM 1802 BEVERLY HOUSE 93-107 LOCKHART ROAD WANCHAI HK
