0
ACTIVE
VDS (V) |
-20 |
VGS (V) |
-20 |
Type |
P-channel |
Configuration |
Single |
Rds(on) at VGS=4.5 V (max) (mΩ) |
76 |
Rds(on) at VGS=2.5 V (max) (mΩ) |
125 |
VGSTH typ (typ) (V) |
-0.75 |
QG (typ) (nC) |
1.02 |
QGD (typ) (nC) |
0.09 |
QGS (typ) (nC) |
0.45 |
ID - silicon limited at TC=25°C (A) |
3.6 |
Logic level |
Yes |
Rating |
Catalog |
Operating temperature range (°C) |
-55 to 150 |
PICOSTAR (YJN)-3-0.414 mm² 0.69 x 0.6
This –20V, 64mΩ, P-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing a substantial reduction in footprint size. The integrated 10kΩ clamp resistor (RC) allows the gate voltage (VGS) to be operated above the maximum internal gate oxide value of –6V, depending on duty cycle. The gate leakage (IGSS) through the diode increases as VGS is increased above –6V.
WELL LINK CHIPS GROUP CO.,LIMITED FLAT/RM 1802 BEVERLY HOUSE 93-107 LOCKHART ROAD WANCHAI HK
