0
ACTIVE
VDS (V) |
-20 |
VGS (V) |
-12 |
Type |
P-channel |
Configuration |
Single |
Rds(on) at VGS=4.5 V (max) (mΩ) |
8.9 |
Rds(on) at VGS=2.5 V (max) (mΩ) |
15.9 |
VGSTH typ (typ) (V) |
-0.9 |
QG (typ) (nC) |
7.5 |
QGD (typ) (nC) |
1.1 |
QGS (typ) (nC) |
2.4 |
ID - silicon limited at TC=25°C (A) |
-72 |
Logic level |
Yes |
Rating |
Catalog |
Operating temperature range (°C) |
-55 to 150 |
VSONP (DNH)-8-10.89 mm² 3.3 x 3.3
This -20-V, 7.7-mΩ NexFET power MOSFET is designed to minimize losses in power conversion load management applications with a SON 3.3 mm × 3.3 mm package that offers an excellent thermal performance for the size of the device.
WELL LINK CHIPS GROUP CO.,LIMITED FLAT/RM 1802 BEVERLY HOUSE 93-107 LOCKHART ROAD WANCHAI HK
