0
ACTIVE
VDS (V) |
-12 |
VGS (V) |
-6 |
Type |
P-channel |
Configuration |
Single |
Rds(on) at VGS=4.5 V (max) (mΩ) |
116 |
Rds(on) at VGS=2.5 V (max) (mΩ) |
165 |
VGSTH typ (typ) (V) |
-0.65 |
QG (typ) (nC) |
0.95 |
QGD (typ) (nC) |
0.068 |
QGS (typ) (nC) |
0.3 |
ID - silicon limited at TC=25°C (A) |
1.8 |
Logic level |
Yes |
Rating |
Catalog |
Operating temperature range (°C) |
-55 to 150 |
PICOSTAR (YJM)-3-0.414 mm² 0.69 x 0.6
This –12-V, 97-mΩ, P-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing a substantial reduction in footprint size.