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CSD23203W
  • CSD23203W
  • CSD23203W

CSD23203W

ACTIVE

-8V, P channel NexFET™ power MOSFET, single WLP 1 mm x 1.5 mm, 19.4 mOhm, gate ESD protection

Texas Instruments CSD23203W Product Info

1 April 2026 0

Parameters

VDS (V)

-8

VGS (V)

-6

Type

P-channel

Configuration

Single

Rds(on) at VGS=4.5 V (max) (mΩ)

19.4

Rds(on) at VGS=2.5 V (max) (mΩ)

26.5

VGSTH typ (typ) (V)

-0.8

QG (typ) (nC)

4.9

QGD (typ) (nC)

0.6

QGS (typ) (nC)

1.3

ID - silicon limited at TC=25°C (A)

3

Logic level

Yes

Rating

Catalog

Operating temperature range (°C)

-55 to 150

Package

DSBGA (YZC)-6-2.1875 mm² 1.75 x 1.25

Features

  • Ultra-Low Qg and Qgd
  • Low RDS(on)
  • Small Footprint
  • Low Profile 0.62-mm Height
  • Lead Free
  • RoHS Compliant
  • Halogen Free
  • CSP 1-mm × 1.5-mm Wafer Level Package
  • Ultra-Low Qg and Qgd
  • Low RDS(on)
  • Small Footprint
  • Low Profile 0.62-mm Height
  • Lead Free
  • RoHS Compliant
  • Halogen Free
  • CSP 1-mm × 1.5-mm Wafer Level Package

Description

This 16.2-mΩ, –8-V, P-Channel device is designed to deliver the lowest on-resistance and gate charge in a small 1 × 1.5 mm outline with excellent thermal characteristics in an ultra-low profile.

This 16.2-mΩ, –8-V, P-Channel device is designed to deliver the lowest on-resistance and gate charge in a small 1 × 1.5 mm outline with excellent thermal characteristics in an ultra-low profile.

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