0
ACTIVE
VDS (V) |
-8 |
VGS (V) |
-6 |
Type |
P-channel |
Configuration |
Single |
Rds(on) at VGS=4.5 V (max) (mΩ) |
19.4 |
Rds(on) at VGS=2.5 V (max) (mΩ) |
26.5 |
VGSTH typ (typ) (V) |
-0.8 |
QG (typ) (nC) |
4.9 |
QGD (typ) (nC) |
0.6 |
QGS (typ) (nC) |
1.3 |
ID - silicon limited at TC=25°C (A) |
3 |
Logic level |
Yes |
Rating |
Catalog |
Operating temperature range (°C) |
-55 to 150 |
DSBGA (YZC)-6-2.1875 mm² 1.75 x 1.25
This 16.2-mΩ, –8-V, P-Channel device is designed to deliver the lowest on-resistance and gate charge in a small 1 × 1.5 mm outline with excellent thermal characteristics in an ultra-low profile.