0
VDS (V) |
60 |
VGS (V) |
20 |
Type |
N-channel |
Configuration |
Single |
Rds(on) at VGS=10 V (max) (mΩ) |
14 |
VGSTH typ (typ) (V) |
3 |
QG (typ) (nC) |
14 |
QGD (typ) (nC) |
2.3 |
QGS (typ) (nC) |
5.2 |
ID - silicon limited at TC=25°C (A) |
56 |
ID - package limited (A) |
50 |
Logic level |
No |
Rating |
Catalog |
Operating temperature range (°C) |
-55 to 175 |
TO-220 (KCS)-3-46.228 mm² 10.16 x 4.55
This 11mΩ, 60V TO-220 NexFET™ power MOSFET is designed to minimize losses in power conversion applications.