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CSD18502Q5B
  • CSD18502Q5B
  • CSD18502Q5B

CSD18502Q5B

ACTIVE

40-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 2.3 mOhm

Texas Instruments CSD18502Q5B Product Info

1 April 2026 1

Parameters

VDS (V)

40

VGS (V)

20

Type

N-channel

Configuration

Single

Rds(on) at VGS=10 V (max) (mΩ)

2.3

Rds(on) at VGS=4.5 V (max) (mΩ)

3.3

VGSTH typ (typ) (V)

1.8

QG (typ) (nC)

52

QGD (typ) (nC)

8.4

QGS (typ) (nC)

10.3

ID - silicon limited at TC=25°C (A)

204

ID - package limited (A)

100

Logic level

Yes

Rating

Catalog

Operating temperature range (°C)

-55 to 150

Package

VSON-CLIP (DNK)-8-30 mm² 6 x 5

Features

  • Ultra-Low Qg and Qgd
  • Low Thermal Resistance
  • Avalanche Rated
  • Logic Level
  • Pb-Free Terminal Plating
  • RoHS Compliant
  • Halogen-Free
  • SON 5 mm × 6 mm Plastic Package
  • Ultra-Low Qg and Qgd
  • Low Thermal Resistance
  • Avalanche Rated
  • Logic Level
  • Pb-Free Terminal Plating
  • RoHS Compliant
  • Halogen-Free
  • SON 5 mm × 6 mm Plastic Package

Description

This 40-V, 1.8-mΩ, 5 mm × 6 mm NexFET™ power MOSFET is designed to minimize losses in power conversion applications.

This 40-V, 1.8-mΩ, 5 mm × 6 mm NexFET™ power MOSFET is designed to minimize losses in power conversion applications.

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