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CSD17312Q5
  • CSD17312Q5

CSD17312Q5

ACTIVE

30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 1.7 mOhm

Texas Instruments CSD17312Q5 Product Info

1 April 2026 0

Parameters

VDS (V)

30

VGS (V)

10

Type

N-channel

Configuration

Single

Rds(on) at VGS=4.5 V (max) (mΩ)

1.7

VGSTH typ (typ) (V)

1.1

QG (typ) (nC)

28

QGD (typ) (nC)

6

QGS (typ) (nC)

8.4

ID - silicon limited at TC=25°C (A)

100

ID - package limited (A)

100

Logic level

Yes

Rating

Catalog

Operating temperature range (°C)

-55 to 150

Package

VSON-CLIP (DQH)-8-30 mm² 6 x 5

Features

  • Optimized for 5V Gate Drive
  • Ultra Low Qg and Qgd
  • Low Thermal Resistance
  • Avalanche Rated
  • Pb Free Terminal Plating
  • RoHS Compliant
  • Halogen Free
  • SON 5-mm × 6-mm Plastic Package
  • APPLICATIONS
    • Notebook Point-of-Load
    • Point-of-Load Synchronous Buck in Networking,
      Telecom and Computing Systems

NexFET is a trademark of Texas Instruments.

  • Optimized for 5V Gate Drive
  • Ultra Low Qg and Qgd
  • Low Thermal Resistance
  • Avalanche Rated
  • Pb Free Terminal Plating
  • RoHS Compliant
  • Halogen Free
  • SON 5-mm × 6-mm Plastic Package
  • APPLICATIONS
    • Notebook Point-of-Load
    • Point-of-Load Synchronous Buck in Networking,
      Telecom and Computing Systems

NexFET is a trademark of Texas Instruments.

Description

The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications and optimized for 5V gate drive applications.

The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications and optimized for 5V gate drive applications.

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