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CSD13380F3
  • CSD13380F3

CSD13380F3

ACTIVE

12-V, N channel NexFET™ power MOSFET, single LGA 0.6 mm x 0.7 mm, 76 mOhm, gate ESD protection

Texas Instruments CSD13380F3 Product Info

1 April 2026 3

Parameters

VDS (V)

12

VGS (V)

8

Type

N-channel

Configuration

Single

Rds(on) at VGS=4.5 V (max) (mΩ)

76

Rds(on) at VGS=2.5 V (max) (mΩ)

92

VGSTH typ (typ) (V)

0.85

QG (typ) (nC)

0.91

QGD (typ) (nC)

0.15

QGS (typ) (nC)

0.19

ID - silicon limited at TC=25°C (A)

3.6

ID - package limited (A)

3.6

Logic level

Yes

Rating

Catalog

Operating temperature range (°C)

-55 to 150

Package

PICOSTAR (YJM)-3-0.414 mm² 0.69 x 0.6

Features

  • Low on resistance
  • Ultra-low Qg and Qgd
  • High operating drain current
  • Ultra-small footprint
    • 0.73 mm × 0.64 mm
  • Low profile
    • 0.36-mm max height
  • Integrated ESD protection diode
    • Rated > 3-kV HBM
    • Rated > 2-kV CDM
  • Lead and halogen free
  • RoHS compliant
  • Low on resistance
  • Ultra-low Qg and Qgd
  • High operating drain current
  • Ultra-small footprint
    • 0.73 mm × 0.64 mm
  • Low profile
    • 0.36-mm max height
  • Integrated ESD protection diode
    • Rated > 3-kV HBM
    • Rated > 2-kV CDM
  • Lead and halogen free
  • RoHS compliant

Description

This 63-mΩ, 12-V N-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing a substantial reduction in footprint size.

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