0
ACTIVE
VDS (V) |
12 |
VGS (V) |
8 |
Type |
N-channel |
Configuration |
Single |
Rds(on) at VGS=4.5 V (max) (mΩ) |
76 |
Rds(on) at VGS=2.5 V (max) (mΩ) |
92 |
VGSTH typ (typ) (V) |
0.85 |
QG (typ) (nC) |
0.91 |
QGD (typ) (nC) |
0.15 |
QGS (typ) (nC) |
0.19 |
ID - silicon limited at TC=25°C (A) |
3.6 |
ID - package limited (A) |
3.6 |
Logic level |
Yes |
Rating |
Catalog |
Operating temperature range (°C) |
-55 to 150 |
PICOSTAR (YJM)-3-0.414 mm² 0.69 x 0.6
This 63-mΩ, 12-V N-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing a substantial reduction in footprint size.
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