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CSD13302W
  • CSD13302W
  • CSD13302W

CSD13302W

ACTIVE

12-V, N channel NexFET™ power MOSFET, single WLP 1 mm x 1 mm, 17.1 mOhm

Texas Instruments CSD13302W Product Info

1 April 2026 1

Parameters

VDS (V)

12

VGS (V)

10

Type

N-channel

Configuration

Single

Rds(on) at VGS=4.5 V (max) (mΩ)

17.1

Rds(on) at VGS=2.5 V (max) (mΩ)

25.8

VGSTH typ (typ) (V)

1

QG (typ) (nC)

6

QGD (typ) (nC)

2.1

QGS (typ) (nC)

0.7

ID - silicon limited at TC=25°C (A)

1.6

ID - package limited (A)

1.6

Logic level

Yes

Rating

Catalog

Operating temperature range (°C)

-55 to 150

Package

DSBGA (YZB)-4-1.5625 mm² 1.25 x 1.25

Features

  • Ultra Low On Resistance
  • Low Qg and Qgd
  • Small Footprint 1 mm × 1 mm
  • Low Profile 0.62 mm Height
  • Pb Free
  • RoHS Compliant
  • Halogen Free
  • Ultra Low On Resistance
  • Low Qg and Qgd
  • Small Footprint 1 mm × 1 mm
  • Low Profile 0.62 mm Height
  • Pb Free
  • RoHS Compliant
  • Halogen Free

Description

This 14.6 mΩ, 12 V, N-Channel device is designed to deliver the lowest on resistance and gate charge in a small 1 × 1 mm outline with excellent thermal characteristics and an ultra low profile.

This 14.6 mΩ, 12 V, N-Channel device is designed to deliver the lowest on resistance and gate charge in a small 1 × 1 mm outline with excellent thermal characteristics and an ultra low profile.

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