Product
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BQ2201
  • BQ2201
  • BQ2201

BQ2201

ACTIVE

SRAM Nonvolatile Controller IC for 1 SRAM Bank

Texas Instruments BQ2201 Product Info

1 April 2026 3

Parameters

Rating

Catalog

Features

1-Bank SRAM, CMOS, Non-volatile controller, Write-protection

Operating current (typ) (µA)

3000

Vin (max) (V)

5.5

Operating temperature range (°C)

-40 to 85

Package

SOIC (D)-8-29.4 mm² 4.9 x 6

Features

  • Power monitoring and switching for 3-volt battery-backup applications
  • Write-protect control
  • 3-volt primary cell inputs
  • Less than 10ns chip-enable propagation delay
  • 5% or 10% supply operation
  • Power monitoring and switching for 3-volt battery-backup applications
  • Write-protect control
  • 3-volt primary cell inputs
  • Less than 10ns chip-enable propagation delay
  • 5% or 10% supply operation

Description

The CMOS bq2201 SRAM Nonvolatile Controller Unit provides all necessary functions for converting a standard CMOS SRAM into nonvolatile read/write memory.

A precision comparator monitors the 5V VCC input for an out-of-tolerance condition. When out of tolerance is detected, a conditioned chip-enable output is forced inactive to write-protect any standard CMOS SRAM.

During a power failure, the external SRAM is switched from the VCC supply to one of two 3V backup supplies. On a subsequent power-up, the SRAM is write-protected until a power-valid condition exists.

The bq2201 is footprint- and timing-compatible with industry standards with the added benefit of a chip-enable propagation delay of less than 10ns.

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