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S80KS2564GACHA040
  • S80KS2564GACHA040

S80KS2564GACHA040

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S80KS2564GACHA040 is a 256 Mb HYPERRAM™ self-refresh DRAM (PSRAM) for high-bandwidth code/data expansion in automotive ECUs. It uses a 1.7 V to 2.0 V HYPERBUS™ extended-IO x16 DDR interface with RWDS strobe and RESET#. The device supports up to 200 MHz clock, up to 800 MBps throughput, and 35 ns maximum access time, and is offered in a 49-ball FBGA, AEC-Q100 Grade 3 (-40°C to +85°C).

Infineon Technologies S80KS2564GACHA040 Product Info

16 April 2026 0

Parameters

Density

256 MBit

Family

KS-4

Interface Frequency (SDR/DDR) (MHz)

- / 200

Interfaces

HYPERBUS x16

Lead Ball Finish

Sn/Ag/Cu

Operating Temperature range

-40 °C to 85 °C

Operating Voltage range

1.7 V to 2 V

Operating Voltage

1.8 V

Planned to be available until at least

See roadmap

Qualification

Automotive

Features

  • HYPERBUS extended-IO interface
  • 16-bit data bus DQ[15:0]
  • DDR transfers on both clock edges
  • 200 MHz max clock rate
  • Up to 800 MBps data throughput
  • 35 ns maximum access time
  • 1.7 V to 2.0 V VCC/VCCQ
  • 1.55 0a 0a standby current (typ.)
  • Hybrid sleep retains data
  • Deep power down stops refresh
  • Partial array refresh (1/8 to 1/2)
  • Active clock stop low-power state

Description

  • x16 DDR bus boosts memory bandwidth
  • 35 ns tACC improves responsiveness
  • 1.8 V I/O matches modern SoCs
  • 800 MBps supports high data loads
  • Burst modes optimize host transfers
  • Clock stop cuts stall power use
  • b5A standby reduces idle power
  • Hybrid sleep keeps state at low power
  • Deep power down lowers leakage power
  • Partial refresh reduces standby current
  • RWDS strobe simplifies timing margin
  • RESET# enables reliable recovery

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