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IRFI530N
  • IRFI530N

IRFI530N

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Infineon Technologies IRFI530N Product Info

16 April 2026 0

Parameters

Budgetary Price €/1k

0.55

ID (@25°C) max

12 A

Mounting

THT

Operating Temperature range

-55 °C to 175 °C

Package

TO-220 FullPAK

Polarity

N

Ptot max

33 W

Qgd

14 nC

QG (typ @10V)

29.3 nC

RDS (on) (@10V) max

110 mΩ

RthJC max

4.5 K/W

Tj max

175 °C

VDS max

100 V

VGS(th) range

2 V to 4 V

VGS(th)

3 V

VGS max

20 V

Features

  • Planar cell structure for wide SOA
  • Optimized for broadest availability from distribution partners
  • Product qualification according to JEDEC standard
  • Silicon optimized for applications switching below <100kHz
  • Isolated package

Description

  • Increased ruggedness
  • Wide availability from distribution partners
  • Industry standard qualification level
  • High performance in low frequency applications
  • No need for insulating hardware

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