0
IQE031N08LM6CG
  • IQE031N08LM6CG

IQE031N08LM6CG

Active and preferred

IQE031N08LM6CG is Infineon’s new best-in-class OptiMOS™ 6 power MOSFET 80 V logic level in PQFN 3.3x3.3 Source-Down Center-Gate (CG) package, offering the industry’s lowest on-state resistance RDS(on) at 25˚C , superior thermal performance, and optimized parallelization.

Infineon Technologies IQE031N08LM6CG Product Info

16 April 2026 0

Parameters

ID (@25°C) max

127 A

IDpuls max

508 A

Operating Temperature range

-55 °C to 175 °C

Package

PQFN 3.3x3.3 Source-Down

Polarity

N

QG (typ @4.5V)

26 nC

QG (typ @10V)

54 nC

RDS (on) (@10V) max

3.15 mΩ

RDS (on) (@4.5V) max

4 mΩ

Special Features

Logic Level, Center-Gate

VDS max

80 V

VGS(th) range

1.1 V to 2.3 V

VGS(th)

1.7 V

Features

  • Logic level allows lower Qrr and QOSS
  • Center Gate optimized for paralleling
  • Up to 35% lower RDS(on) vs previous Gen
  • New, optimized layout possibilities

Description

  • Enables highest power density & performance
  • Superior thermal performance
  • Efficient layout for space use
  • Simplified MOSFET parallelization
  • Improved PCB losses

Subscribe to Welllinkchips !
Your Name
* Email
Submit a request