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S29GL512S10DHI023
  • S29GL512S10DHI023

S29GL512S10DHI023

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The S29GL512S10DHI023 is a 512 Mb parallel NOR flash memory based on MIRRORBIT™ Eclipse 65 nm technology. It features a 3.0 V core, versatile I/O (1.65 V to 3.6 V), 16-bit data bus, and random access times down to 100 ns with page access as fast as 15 ns. Buffer programming up to 512 bytes, automatic ECC, and robust sector protection enhance reliability. Designed for embedded, automotive, and industrial systems, it supports 100,000 program/erase cycles.

Infineon Technologies S29GL512S10DHI023 Product Info

16 April 2026 1

Parameters

Density

512 MBit

Family

GL-S

Initial Access Time

100 ns

Interface Frequency (SDR/DDR) (MHz)

NA

Interfaces

Parallel

Lead Ball Finish

Sn/Ag/Cu

Operating Temperature range

-40 °C to 85 °C

Operating Voltage range

2.7 V to 3.6 V

Operating Voltage

3 V

Page Access Time

15 ns

Peak Reflow Temp

260 °C

Planned to be available until at least

2035

Qualification

Industrial

Features

  • 65 nm MIRRORBIT™ Eclipse technology
  • CMOS 3.0 V core with versatile I/O
  • Single supply for read/program/erase
  • Versatile I/O voltage range: 1.65 V to VCC
  • 16-bit data bus
  • Asynchronous 32-byte page read
  • 512-byte programming buffer
  • Internal hardware ECC with single bit
  • Uniform 128 KB sectors
  • Suspend/resume for program and erase
  • Advanced sector protection (ASP)
  • 1024-byte one time program (OTP) array

Description

  • High reliability with 65 nm process
  • Flexible I/O supports system integration
  • Easy power supply design
  • Supports wide I/O voltage range
  • Fast data transfers with 16-bit bus
  • Efficient page read for fast access
  • Fast programming with large buffer
  • ECC enhances data integrity
  • Simple sector management
  • Interruptible program/erase for flexibility
  • Robust data and sector protection
  • Secure OTP for permanent data

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