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S29GL256S10FAIV10
  • S29GL256S10FAIV10

S29GL256S10FAIV10

Active and preferred

The S29GL256S10FAIV10 is a 256 Mb parallel NOR flash memory based on 65 nm MIRRORBIT™ Eclipse technology, with a 3.0 V core and versatile I/O (1.65 V to 3.6 V). It delivers random access times of 90 ns and page access times of 15 ns, and features a 512-byte programming buffer. Uniform 128 KB sector erase and internal ECC enhance data integrity. With 100,000 program/erase cycles and 20 years data retention, it is ideal for automotive, industrial, and embedded applications.

Infineon Technologies S29GL256S10FAIV10 Product Info

16 April 2026 13

Parameters

Density

256 MBit

Family

GL-S

Initial Access Time

100 ns

Interface Frequency (SDR/DDR) (MHz)

NA

Interfaces

Parallel

Lead Ball Finish

Sn/Pb

Operating Temperature range

-40 °C to 85 °C

Operating Voltage range

2.7 V to 3.6 V

Operating Voltage

3 V

Page Access Time

15 ns

Peak Reflow Temp

220 °C

Planned to be available until at least

2035

Qualification

Industrial

Features

  • 65 nm MIRRORBIT™ Eclipse technology
  • CMOS 3.0 V core with versatile I/O
  • Single supply for read/program/erase
  • Versatile I/O voltage range: 1.65 V to VCC
  • 16-bit data bus
  • Asynchronous 32-byte page read
  • 512-byte programming buffer
  • Internal hardware ECC with single bit
  • Uniform 128 KB sectors
  • Suspend/resume for program and erase
  • Advanced sector protection (ASP)
  • 1024-byte one time program (OTP) array

Description

  • High reliability with 65 nm process
  • Flexible I/O supports system integration
  • Easy power supply design
  • Supports wide I/O voltage range
  • Fast data transfers with 16-bit bus
  • Efficient page read for fast access
  • Fast programming with large buffer
  • ECC enhances data integrity
  • Simple sector management
  • Interruptible program/erase for flexibility
  • Robust data and sector protection
  • Secure OTP for permanent data

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