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S29GL01GT10FAI023
  • S29GL01GT10FAI023

S29GL01GT10FAI023

Active and preferred

The S29GL01GT10FAI023 is a 1 Gb (128 MB) parallel NOR flash memory using 45-nm MIRRORBIT™ technology, with a 3.0 V core and I/O voltage from 1.65 V to VCC. It features ×8/×16 data bus, 15 ns asynchronous page read, and 100 ns random access. With a 512-byte programming buffer, internal ECC for single-bit error correction, and advanced sector protection, it supports -40°C to +85°C operation, 100,000 program/erase cycles, and 20-year data retention for reliable embedded code.

Infineon Technologies S29GL01GT10FAI023 Product Info

16 April 2026 0

Parameters

Density

1 GBit

Family

GL-T

Initial Access Time

100 ns

Interface Frequency (SDR/DDR) (MHz)

NA

Interfaces

Parallel

Lead Ball Finish

Sn/Pb

Operating Temperature range

-40 °C to 85 °C

Operating Voltage range

2.7 V to 3.6 V

Operating Voltage

3 V

Page Access Time

15 ns

Peak Reflow Temp

220 °C

Planned to be available until at least

2035

Qualification

Industrial

Features

  • 45-nm MIRRORBIT™ technology
  • Single supply for read/program/erase
  • Versatile I/O voltage (1.65 V to VCC)
  • ×8/×16 data bus
  • 512-byte programming buffer
  • Hardware ECC with single bit correction
  • Uniform 128-KB sectors
  • Advanced sector protection (ASP)
  • 100,000 program/erase cycles per sector
  • 20-year data retention (typical)
  • Power-up and low VCC write inhibit
  • Status Register, Data Polling, Ready/Busy pin

Description

  • High density for embedded applications
  • Flexible I/O supports various host systems
  • Fast programming with 512-byte buffer
  • Reliable data with built-in ECC
  • Simplifies memory management with uniform
  • Enhanced data security with ASP
  • Long device lifetime, 100K cycles per sector
  • Retains data up to 20 years
  • Prevents accidental writes during power
  • Easy status monitoring and diagnostics

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