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ISC009N06LM5
  • ISC009N06LM5

ISC009N06LM5

Active and preferred

The ISC009N06LM5, Infineon's OptiMOS™ MOSFET in the SuperSO8 package extends the OptiMOS™ 5 and 3 product portfolio and enables higher power density in addition to improved robustness, responding to the need for lower system cost and increased performance. Low reverse recovery charge (Qrr) improves the system reliability by providing a significant reduction of voltage overshoot, which minimizes the need for snubber circuits, resulting in less engineering cost and effort.

Infineon Technologies ISC009N06LM5 Product Info

16 April 2026 0

Parameters

Budgetary Price €/1k

1.65

ID (@25°C) max

348 A

Operating Temperature range

-55 °C to 175 °C

Package

SuperSO8 5x6

Polarity

N

QG (typ @10V)

157 nC

QG (typ @4.5V)

77 nC

RDS (on) (@10V) max

0.9 mΩ

RDS (on) (@4.5V) max

1.1 mΩ

Special Features

Logic Level, Fused leads

VDS max

60 V

VGS(th) range

1.1 V to 2.3 V

Apps

Edge computing, Automotive body electronics & power distribution, Automotive secondary power distribution unit, Light electric vehicle solutions, Multicopters and drones

Features

  • Best-in-class (BIC) product
  • Enables highest power density
  • Higher operating temp rating to 175°C
  • Excellent thermal behavior
  • Lower reverse recovery charge

Description

  • Lower full load temperature
  • Less paralleling
  • Reduced overshoot
  • Increased system power density
  • Smaller size
  • System cost reduction
  • Engineering costs and effort reduction

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