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IPD11DP10NM
  • IPD11DP10NM

IPD11DP10NM

Active and preferred

OptiMOS™ P-Channel MOSFET 100 V in DPAK package targeting battery management, load switch and reverse polarity protection applications, reducing design complexity in medium and low power applications. Easy interface to MCU, fast switching as well as avalanche ruggedness makes it suitable for high quality demanding applications. Available in normal level featuring a wide RDS(on) range and improves efficiency at low loads.

Infineon Technologies IPD11DP10NM Product Info

16 April 2026 0

Parameters

Budgetary Price €/1k

0.51

ID (@25°C) max

-22 A

ID max

-22 A

IDpuls max

-88 A

Mounting

SMT

Operating Temperature range

-55 °C to 175 °C

Package

DPAK (TO-252)

Pin Count

3 Pins

Polarity

P

Ptot max

125 W

QG

-59 nC

QG (typ @10V)

-59 nC

RDS (on) (@10V) max

111 mΩ

RDS (on) max

111 mΩ

VDS max

-100 V

VGS(th) range

-2.1 V to -4 V

Apps

Light electric vehicle solutions

Features

  • Available in 4 different packages
  • Wide RDS(on) range
  • Normal level & logic level availability
  • Optimized for a wide range applications
  • Availability from distribution partners

Description

  • Industry standard package
  • Ideal for high & low switching frequency
  • Avalanche ruggedness
  • Easy interface to MCU
  • Higher efficiency at low loads, low Qf
  • Reduced design complexity
  • Energy efficiency

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