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S26KL128SDABHN020
  • S26KL128SDABHN020

S26KL128SDABHN020

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The S26KL128SDABHN020 is a 128 Mb (16 MB) HYPERFLASH™ NOR flash memory with a 3.0 V-only supply and HYPERBUS™ DDR interface, enabling up to 200 MBps sustained read throughput at 100 MHz. It features a 96 ns initial random access time, advanced sector protection, ECC, CRC, and low-power modes. AEC-Q100 qualified for automotive use, it operates from –40°C to +105°C, making it ideal for automotive ECUs and high-performance embedded systems.

Infineon Technologies S26KL128SDABHN020 Product Info

16 April 2026 1

Parameters

Bus Width

x8

Density

128 MBit

Family

KL-S

Initial Access Time

96 ns

Interface Bandwidth

200 MByte/s

Interface Frequency (SDR/DDR) (MHz)

- / 100

Interfaces

HYPERBUS

Lead Ball Finish

Sn/Ag/Cu

Operating Temperature range

-40 °C to 125 °C

Operating Voltage range

2.7 V to 3.6 V

Operating Voltage

3 V

Peak Reflow Temp

260 °C

Planned to be available until at least

2035

Qualification

Industrial

Technology

HYPERFLASH

Features

  • 3.0 V I/O with 11 bus signals
  • 1.8 V I/O with 12 bus signals
  • Up to 333 MBps sustained read throughput
  • DDR: two data transfers per clock
  • 8-bit data bus (DQ[7:0])
  • 96-ns initial random read access time
  • 512-byte program buffer
  • ECC: 1-bit correction, 2-bit detection
  • Hardware accelerated CRC calculation
  • Secure silicon region (1024-byte OTP)
  • Advanced sector protection methods
  • Low power modes: standby 25 µA, deep

Description

  • High throughput enables fast data access
  • DDR boosts system performance
  • 8-bit bus simplifies integration
  • Fast random access reduces latency
  • Large buffer speeds up programming
  • ECC ensures reliable data integrity
  • CRC detects data errors quickly
  • Secure region protects critical data
  • Flexible sector protection enhances security
  • Low power modes extend battery life

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