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CYRS1643KV18-250GCMB
  • CYRS1643KV18-250GCMB

CYRS1643KV18-250GCMB

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Infineon Technologies CYRS1643KV18-250GCMB Product Info

16 April 2026 0

Parameters

Architecture

QDR-II+, ODT

Bank Switching

N

Burst Length (Words)

4

Data Width

x 18

Density

144 MBit

Device weight

6152.8 mg

ECC

N

Family

QDR-II+

Frequency

250 MHz

Interfaces

Parallel

Lead Ball Finish

Sn/Pb

On-Die Termination

Y

Operating Temperature range

-55 °C to 125 °C

Operating Voltage range

1.7 V to 1.9 V

Organization (X x Y)

8Mb x 18

Peak Reflow Temp

220 °C

Planned to be available until at least

2033

Qualification

Military

Read Latency (Cycles)

2

Features

  • 144Mb density,8Mx18 four-word burst mode
  • 250MHz > freq. / 36 Gbps throughput
  • Two independent unidirectional data port
  • Double Data Rate (DDR) port
  • Output impedance matching input
  • Memory core bit-interleaving
  • 1.7 V to 1.9 V operating voltage range
  • –55°C to +125°C military temp. grade
  • 165-ball ceramic CGA (CCGA)
  • Flight devices, order 5962R1821404VXF

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