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IRFB4710
  • IRFB4710

IRFB4710

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Infineon Technologies IRFB4710 Product Info

16 April 2026 0

Parameters

Budgetary Price €/1k

1

ID (@25°C) max

75 A

Mounting

THT

Operating Temperature range

-55 °C to 175 °C

Package

TO-220

Polarity

N

Ptot max

200 W

Qgd

40 nC

QG (typ @10V)

110 nC

RDS (on) (@10V) max

14 mΩ

RthJC max

0.75 K/W

Tj max

175 °C

VDS max

100 V

VGS(th) range

3.5 V to 5.5 V

VGS(th)

4.5 V

VGS max

20 V

Features

  • Planar cell structure for wide SOA
  • Optimized for broadest availability from distribution partners
  • Product qualification according to JEDEC standard
  • Silicon optimized for applications switching below <100kHz
  • Industry standard through-hole power package
  • High-current rating

Description

  • Increased ruggedness
  • Wide availability from distribution partners
  • Industry standard qualification
  • High performance in low frequency applications
  • Standard pin-out allows for drop-in replacement
  • High current capability

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