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IQD020N10NM5CG
  • IQD020N10NM5CG

IQD020N10NM5CG

Active and preferred

The power MOSFET IQD020N10NM5CG 100 V normal-level comes in a PQFN 5x6 mm2 Source-Down package. The part offers the industry’s lowest RDS(on) of 2.0 mΩ combined with outstanding thermal performance for easy power loss management. This enables higher system efficiency and power density for a large variety of end applications like SMPS , battery-powered applications, battery management , and low-voltage drives .

Infineon Technologies IQD020N10NM5CG Product Info

16 April 2026 0

Parameters

Budgetary Price €/1k

1.95

ID (@25°C) max

273 A

IDpuls max

1092 A

Operating Temperature range

-55 °C to 175 °C

Package

PQFN 5x6 Source-Down

Polarity

N

QG (typ @10V)

107 nC

RDS (on) (@10V) max

2.05 mΩ

Special Features

Center-Gate

VDS max

100 V

VGS(th) range

2.2 V to 3.8 V

VGS(th)

3 V

Features

  • Silicon tech OptiMOS™ 100 V with FOMs
  • Source-Down package with thermal
  • Source-Down with maximized chip ratio
  • Source-Down in Center-Gate footprint

Description

  • Minimized conduction losses
  • Reduced voltage overshoot
  • Increased maximum current capability
  • Fast switching
  • Less device paralleling required
  • Center-Gate for optimal parallelization
  • Lowest RDS(on) on 5x6 mm² PCB
  • Enhanced thermal management
  • Minimal parasitics, optimal switching
  • Industry standard package

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