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IRFB4229
  • IRFB4229

IRFB4229

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The IR MOSFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Infineon Technologies IRFB4229 Product Info

16 April 2026 0

Parameters

Budgetary Price €/1k

1.04

ID (@25°C) max

46 A

Mounting

THT

Operating Temperature range

-40 °C to 175 °C

Package

TO-220

Polarity

N

Ptot max

330 W

Qgd

26 nC

QG (typ @10V)

72 nC

RDS (on) (@10V) max

46 mΩ

RthJC max

0.45 K/W

Tj max

175 °C

VDS max

250 V

VGS(th) range

3 V to 5 V

VGS(th)

4 V

VGS max

30 V

Apps

Automotive LED lighting systems

Features

  • Industry standard through-hole package
  • High-current rating
  • JEDEC standard Product qualification
  • 100kHz Silicon switching applications
  • Softer body-diode vs previous generation
  • Wide portfolio available

Description

  • Drop-in replacement with standard pinout
  • High-current carry capability package
  • Industry standard qualification level
  • High performance, low-frequency
  • Increased power density
  • Flexibility for optimal device selection

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