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BSZ018NE2LSI
  • BSZ018NE2LSI

BSZ018NE2LSI

With the OptiMOS™ 25V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications. Available in halfbridge configuration (power stage 5x6).

Infineon Technologies BSZ018NE2LSI Product Info

16 April 2026 0

Parameters

Budgetary Price €/1k

0.55

Ciss

2500 pF

Coss

1100 pF

ID (@25°C) max

153 A

IDpuls max

612 A

Operating Temperature range

-55 °C to 150 °C

Package

PQFN 3.3 x 3.3

Polarity

N

Ptot max

69 W

QG (typ @4.5V)

17 nC

QG (typ @10V)

36 nC

RDS (on) (@10V) max

1.8 mΩ

RDS (on) (@4.5V) max

2.5 mΩ

RDS (on) (@4.5V LL) max

2.5 mΩ

Rth

1.8 K/W

Special Features

Monolithically Integrated Schottky-like Diode

VDS max

25 V

VGS(th) range

1.2 V to 2 V

VGS(th)

1.78 V

Description

  • Save overall system costs by reducing the number of phases in multiphase converters
  • Reduce power losses and increase efficiency for all load conditions
  • Save space with smallest packages like CanPAK™, S3O8 or system in package solution
  • Minimize EMI in the system making external snubber networks obsolete and the products easy to design-in

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